Contact Resistance of Microbumps in a Typical Through-Silicon-Via Structure

Lwo, Ben-Je; Teng, Chia-Liang; Tseng, Kun-Fu; Ni, Tom; Lu, Shirley

doi:10.1109/tcpmt.2016.2627577

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Finally, commercial FEM packages (COMSOL Multiphysics as well as others) model electrical contacts as homogeneous surface conditions [47], [48]. Consequently, it was required to determine the contact resistivity by multiplying the interface resistance by the contact surface [52]- [57] ρ C_DC-EB = R C_DC-EB • A C_DC-EB (13) and Note that since the contact area between the DC and EB layers is the same for both DC-EB and DC-EB-SPAR_1 samples [i.e., 0.00456 m 2 , see Fig. 2(a) and (b)], RC_DC-EB was directly subtracted in (12) to isolate the term RC_EB-SPAR.…”

Section: B Contact Resistance and Contact Resistivitymentioning

confidence: 99%

Estimation of Contact Resistivity in Lightning Protection Equipotential Bonding Joints of Wind Turbine Blades

Laudani

Senis

Lewin

et al. 2021

IEEE Trans. Electromagn. Compat.

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Modern lightning protection systems for wind turbine blades with conducting structural elements, e.g., carbon fibre reinforced polymer (CFRP) spar caps, contain equipotential bonding joints to prevent sparking during strikes. Significant current levels are experienced through the joints and the characterization of the electrical contact at the bonding regions is essential for reliable protection. Therefore, this article aims to characterize the contact resistivity of several equipotential bonding joints. The proposed methodology first measures the total resistance of the samples, and then the bulk resistance of the conductive elements is computed using the finite-element method. The latter is required to predict the spreading effects in CFRP components due to the strong anisotropic nature of such materials. After that, the contact resistance is calculated by subtracting the predicted bulk resistances from the measured total resistances. The developed procedure was applied to three typical equipotential bonding materials: expanded copper foil (ECF), biaxial (BIAX) CFRP and unidirectional (UD) CFRP. Both ECF and BIAX CFRP showed superior contact quality than UD CFRP, with one to two orders of magnitude smaller contact resistivity.

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Section: B Contact Resistance and Contact Resistivitymentioning

confidence: 99%

Estimation of Contact Resistivity in Lightning Protection Equipotential Bonding Joints of Wind Turbine Blades

Laudani

Senis

Lewin

et al. 2021

IEEE Trans. Electromagn. Compat.

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Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Huang,

Lu,

Ran

et al. 2024

AIP Advances

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In this work, we have developed a novel method for simultaneously performing interlayer copper interconnecting and Cu filling inside TSVs. It was applied to demonstrate two-layer stacked chips that process the development of interlayer copper interconnecting and Cu pillar filling in through-silicon vias (TSVs) by copper electroplating at room temperature (25 °C). In the two-layer stacked structure, a chip with TSVs was bonded with another chip without TSVs using a permanent bonding adhesive. After all micro-channels were immersed in the copper sulfate electroplating solution by vacuum pumping, copper electroplating made the interlayer copper interconnecting structures and the simultaneously filled copper pillars in TSVs a homogeneous three-dimensional (3D) interconnected structure and did not show original interfaces. Furthermore, no apparent gaps, air bubbles, or cracks were observed in the 3D copper interconnecting structure. The measured direct current resistance and the critical frequency at which the skin effect occurs of the formed 3D copper interconnected structure were very close to the theoretical value. The pure copper 3D interconnected structure without inner interfaces is very valuable for high-quality 3D integrated systems.

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The Analysis for Bump Resistance Improvement by Optimizing the Sputter Condition

Su¹,

Wang²,

Tsai³

et al. 2019

2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

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Contact Resistance of Microbumps in a Typical Through-Silicon-Via Structure

Cited by 5 publications

References 12 publications

Estimation of Contact Resistivity in Lightning Protection Equipotential Bonding Joints of Wind Turbine Blades

Estimation of Contact Resistivity in Lightning Protection Equipotential Bonding Joints of Wind Turbine Blades

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

The Analysis for Bump Resistance Improvement by Optimizing the Sputter Condition

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