Contact reaction between Si and rare earth metals

Abstract

Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275–900 °C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325–400 °C), and are stable up to 900 °C. The growth does not follow a layered growth mode.

Ion-Beam Synthesis of Buried Yttrium Silicide

“…Thermal annealing of Y-Si bilayers results in the formation of only one silicide phase, YSi 1 . 7 [2]. However, a recent work showed ion mixing of Y-Si bilayers formed the YSi phase [3].…”

Erbium silicidation on SiGe for advanced MOS application

“…Study of rare earth germanosilicides growth on SiGe substrate has received some attention recently due to its ability to improve transistor performance [5]. While the formation of ErSi 2 through the reaction between Er and Si substrate usually results in the formation of pits and defects which affects the barrier height as well as the reverse current [6,7], little is known about the resulting structure from the reaction between Er and Si 1Àx Ge x substrate. In this report, the effect of Ti capping towards the morphological stability of Er germanosilicide from the reaction between Er/Si 1Àx Ge x will be studied.…”

Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

“…[1][2][3][4] The bulk structure of the heavy RE silicides studied until now consists of a stack of alternating planes of RE and Si atoms. In the Si planes one atom out of six is missing, forming a p(ͱ3 ϫͱ3)R30°superstructure, and leading to a RESi 1.7 stoichiometry.…”