Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications

Babichev, A. V.; Gasumyants, V. É.; Egorov, A. Yu.; Vitusevich, S. А.; Tchernycheva, Maria

doi:10.1088/0957-4484/25/33/335707

Cited by 20 publications

(22 citation statements)

References 61 publications

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“…This variation, however, did not exceed 10% of the pristine R C value, since only a small portion of the contact area was irradiated. A reduction in R C was measured after the laser‐processed samples were thermally annealed at T = 400 °C for 1 h. It is notable that the improvements observed were far more substantial for the laser‐irradiated devices, compared to the ones reported after a single annealing step in other studies . In particular, R C at A C = 3.3 µm 2 was reduced to 2.57 Ω µm, less than 16% of its pristine value after the annealing step.…”

Section: Resultsmentioning

confidence: 80%

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Keramatnejad

Zhou

et al. 2017

Adv Materials Inter

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The electrical performance of graphene‐based devices is largely limited by substantial contact resistance at the heterodimensional graphene–metal junctions. A laser‐assisted nanowelding technique is developed to reduce graphene–metal (G–M) contact resistance and improve carrier injection in suspended graphene devices. Selective breakdown of CC bonds and formation of structural defects are realized through laser irradiation at the edges of graphene within the G–M contact regions in order to increase the chemical reactivity of graphene, facilitate G–M bonding, and, therefore, maximize interfacial carrier transportation. Through this method, significantly reduced G–M contact resistances, as low as 2.57 Ω µm are obtained. In addition, it is demonstrated that the location of laser‐induced defects within the contact areas significantly impacts the interfacial properties and the carrier mobility of graphene devices. A fourfold increase in photocurrent is observed in the suspended graphene photodetectors with treated G–M interfaces as compared to ordinary ones. This contact‐free and position‐selective technique minimizes the degradation of the graphene channels and maintains the superior performance of graphene devices, making it a promising approach for reducing G–M resistance in the fabrication of graphene‐based devices.

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Section: Resultsmentioning

confidence: 80%

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Keramatnejad

Zhou

et al. 2017

Adv Materials Inter

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“…In comparison with currently widely used silicon substrate, GaAs has direct band gap and is highly resistant to radiation which makes it suitable for high efficiency solar cell design and space application. The present technique can also provide the possibility to combine large area graphene with GaAs [17,18]. Jie group transferred single and bilayer graphene sheets onto n-type GaAs substrates and got a power conversion efficiency of 1.95% [19].…”

Section: Introductionmentioning

confidence: 99%

Modeling and Design of Graphene GaAs Junction Solar Cell

Kuang

Liu

et al. 2015

Advances in Condensed Matter Physics

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Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

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“…7 These measurements give evidence that RGO with large amounts of wrinkling on a substrate can transport electrons well and that it is thus not necessary to produce suspended, pristine graphene in order to benefit from its electrical transport properties.…”

mentioning

confidence: 96%

Localized electrical resistance measurements of supported reduced graphene oxide using in‐situ STM ‐ TEM

Nilsson¹,

Knoop²,

Cumings

et al. 2016

European Microscopy Congress 2016: Proceedings

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The tunable electrical properties of reduced graphene oxide (RGO) make it an ideal candidate for many applications including energy storage.1 However, in order to utilize the material in industrially applied systems it is essential to understand the behavior of the material on the nanoscale, especially how naturally occurring phenomenon like wrinkling effects the electronic transport. While there have been many theoretical investigations on the transport behavior, there are much fewer experimental measurements.2, 3, 4 Here we used a transmission electron microscope (TEM) with scanning tunneling microscope (STM) probe in-situ holder is used to perform localized electrical measurements on wrinkled, supported RGO flakes. The RGO flakes are deposited onto pre-patterned Au electrodes on SiN membranes. The flakes are 1-3 layers thick and have lateral dimensions on the order of single micrometers. They are deposited through an ammonium laurate (AL) aqueous surfactant. The TEM allows for observation of the local wrinkling structure of the RGO and simultaneously a Nanofactory STM-TEM holder is used to perform localized resistance measurements. The holder allows for manipulation with and positioning of Au STM probes, with diameters less than 100 nm, with sub-nanometer precision. The results show that the overall resistance is low, on the order of single kΩ, if the contact between the probe and the RGO is optimized. Wrinkles reduce the contact resistance between RGO and the probe. The overall trend for more than 70 measurements is that the total resistance decreases with increasing amount of wrinkles and that the contact resistance dominates the resistance when the probe makes contact with wrinkle free RGO. The sheet resistance and maximal contact resistance for our measurements range from 5-20 kΩ/☐ and 6-20E-7Ω cm 2 , respectively, which falls in line with other scanning probe measurements for graphene and metal contacts. 5, 6Here we use a bottom metal contact for the gold electrodes which eliminates the risk of resist contamination and metal doping of the graphene.7 These measurements give evidence that RGO with large amounts of wrinkling on a substrate can transport electrons well and that it is thus not necessary to produce suspended, pristine graphene in order to benefit from its electrical transport properties.

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Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications

Cited by 20 publications

References 61 publications

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Modeling and Design of Graphene GaAs Junction Solar Cell

Localized electrical resistance measurements of supported reduced graphene oxide using in‐situ STM ‐ TEM

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