Modeling and Design of Graphene GaAs Junction Solar Cell

Kuang, Yawei; Liu, Yu‐Shen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Hong, Xiaodong; Feng, Jian

doi:10.1155/2015/326384

Cited by 21 publications

(4 citation statements)

References 22 publications

(23 reference statements)

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“…In this section, the potential of numerical modelling using Silvaco TCAD for photodetectors based on MoS 2 /h-BN/graphene heterostructure will be reviewed. Previously, graphene [ 42 , 91 , 92 , 93 ], h-BN and MoS 2 [ 94 ] materials were modelled individually or with heterojunctions in Silvaco TCAD, either with ATLAS (device simulator) or ATHENA (process simulator) for devices like transistors, photodetectors and solar cells. With this motivation, a preliminary study with numerical modelling using Silvaco ATLAS on a MoS 2 /h-BN/graphene photodetector, which was adapted from [ 10 ], was reported in [ 5 ].…”

Section: Theoretical and Numerical Modelling Of Mos 2 mentioning

confidence: 99%

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

et al. 2021

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A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

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Section: Theoretical and Numerical Modelling Of Mos 2 mentioning

confidence: 99%

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

et al. 2021

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“…A 3C-SiC material is used as a graphene channel. Another design using the Silvaco TCAD user-defined material is demonstrated by Kuang et al [24]. In Silvaco TCAD, three materials have the properties which are close to that of graphene material, as shown in Table 1.…”

Section: Design Of Graphene Fet With 100 Nm Channel Lengthmentioning

confidence: 99%

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Tayade

Lahudkar²

2021

Adv. technol. innov.

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In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

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“…Gallium is a promising element for the graphene based electronic devices. It is a component of GaAs/graphene solar cells [34,35], Ga/graphene systems applied in ultraviolet plasmonics [36,37], and it is a good template for heteroepitaxial growth of GaN [38]. Several experimental studies [37,39] focused on the deposition of atomic Ga on graphene proved cluster growth of Ga, but almost no DFT computational study (see our previous work [34]) has been performed for Ga-atom cluster forming on graphene.…”

Section: Introductionmentioning

confidence: 99%

Density functional study of gallium clusters on graphene: electronic doping and diffusion

Nezval

Bartošík

Mach

et al. 2020

J. Phys.: Condens. Matter

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Motivated by experimental results on transport properties of graphene covered by gallium atoms, the density functional theory study of clustering of gallium atoms on graphene (up to a size of 8 atoms) is presented. The paper explains a rapid initial increase of graphene electron doping by individual Ga atoms with Ga coverage, which is continually reduced to zero, when bigger multiple-atom clusters have been formed. According to DFT calculations with and without the van der Waals correction, gallium atoms start to form a three-dimensional cluster from five and three atoms, respectively. The results also explain an easy diffusion of Ga atoms while forming clusters caused by a small diffusion barrier of 0.11 eV. Moreover, the calculations show this barrier can be additionally reduced by the application of an external electric field, which was simulated by the ionization of graphene. This effect offers a unique possibility to control the cluster size in experiments only by applying a gate-voltage to the graphene in a field-effect transistor (FET) geometry and thereby without growth temperature assistance.

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Modeling and Design of Graphene GaAs Junction Solar Cell

Cited by 21 publications

References 22 publications

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Density functional study of gallium clusters on graphene: electronic doping and diffusion

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