Contact-induced doping in aluminum-contacted molybdenum disulfide

Shimazu, Yoshihiro; Arai, Kensuke; Iwabuchi, Tatsuya

doi:10.7567/jjap.57.015801

Cited by 14 publications

(12 citation statements)

References 37 publications

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“… 10 − 12 Control over doping is also a promising route toward realizing high-quality (virtually) Ohmic contacts needed for high-performance TMD-based devices. 13 In other fields such as photovoltaics, energy storage, and catalysis, controlled doping can also be beneficial. 14 − 17 Hence, it is clear that synthesis processes that offer precise control over the charge carrier type, concentration, and doping profile in these TMDs are highly sought-after.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Vandalon

Verheijen

Kessels

et al. 2020

ACS Appl. Nano Mater.

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Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS 2 via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p -type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (10 17 up to 10 21 cm –3 ) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS 2 ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Vandalon

Verheijen

Kessels

et al. 2020

ACS Appl. Nano Mater.

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show abstract

“…several questions remain open in this field including the fine control of the separation distance metal-graphene; the perturbation of graphene's bandstructure due to the presence of metals [32,45] (see Supporting Information Note 5) including the possible creation of defects due to the metal deposition; the effect of metal granularity [54] in the dipole created at metal-graphene interfaces or undesired residual current being injected from the graphene to the metal in some cases (see Supporting Information Note 7). Finally, our results can be extended to other 2D materials [41,42] and are relevant to other applications where the spatial extent of lateral p-n junctions at metalgraphene interfaces is important, including contacts [36][37][38][39] and photodetectors [43,44]. We solve the non-linear Poisson's equation, described by Eq.…”

Section: Discussionmentioning

confidence: 99%

“…We note that our results can be extended to other 2D materials since they are also doped by the presence of metal clusters [41,42] and are relevant to other applications where the spatial extent of lateral p-n junctions is important including graphene-metal contacts [36][37][38][39] and metal-graphene photodetectors [43,44]. The paper is organized as follows.…”

Section: Implementing Sharp Lateral P-n Junctions In Graphene Field-e...mentioning

confidence: 99%

Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications

Chaves¹,

Jiménez²,

Santos

et al. 2019

Nanoscale

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Creation of sharp lateral p-n junctions in graphene devices, with transition widths w well below the Fermi wavelength λ F of graphene's charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width w of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions (w << λ F )can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity (<10). In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials.

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“…The subthreshold swing (SS) and ON-state current are 190 mV dec −1 and 0.65 µA µm −1 , respectively. [22,23] The contact resistances for the self-oxidized Al under different electron density are extracted in Figure S4 (Supporting Information). Due to the native AlO x layer at Al/MoS 2 interfaces, the relative high contact resistance constrains the ON-state current.…”

Section: Measurement and Simulationmentioning

confidence: 99%

A 10 nm Short Channel MoS₂ Transistor without the Resolution Requirement of Photolithography

Ren

Yang

et al. 2021

Adv Elect Materials

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MoS2 is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS2 transistor is still inclusive. In this work, a method to fabricate MoS2 transistors with short channel length is demonstrated, which is realized by the self‐oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS2 are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self‐oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self‐oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material‐based transistors.

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Contact-induced doping in aluminum-contacted molybdenum disulfide

Cited by 14 publications

References 37 publications

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications

A 10 nm Short Channel MoS₂ Transistor without the Resolution Requirement of Photolithography

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Contact-induced doping in aluminum-contacted molybdenum disulfide

Cited by 14 publications

References 37 publications

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

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Product

Resources

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Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

A 10 nm Short Channel MoS₂ Transistor without the Resolution Requirement of Photolithography