Contact-free on-axis metrology for the fabrication and testing of complex optical systems

Courteville, Alain; Wilhelm, Rainer; Delaveau, Marie; Garcia, Fabrice; Vecchi, François de

doi:10.1117/12.625200

Cited by 10 publications

(7 citation statements)

References 5 publications

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“…Our progress here is the electromagnetic modelling: We apply the correct values for eff ( , ) , model the spectral amplitude and dispersion accurately, and in particular, we consider the interference of the fringe patterns from TSV top (1 st term in (13)) and bottom (2 nd term in (13)) contrary to [16,18,19,23,24]. These two intensity patterns can e.g.…”

Section: Processing Of the Oct Datamentioning

confidence: 99%

“…The spectrum of the light source of the time domain OCT device applied in this paper is in the range of 0.9 c ≤ ≤ 1.1 c with c = 1.329 µm the center wavelength, which has the advantage that silicon is transparent there, allowing also measurements from the backside of the wafer when needed [18,19,23,24].…”

Section: Introductionmentioning

confidence: 99%

“…The reliability and longitudinal accuracy of OCT devices depends strongly on the processing of the measured signal, which itself depends on the underlying physical models. Rather popular modelling approaches in the case of time-domain OCT applied to TSVs assume a Gaussian spectrum of the light source, the absence of interferometer dispersion and apply ray tracing at the diffractive structures [18,23,24]. Then, the signal processing is based on the calculation of the envelope positions of the signals (fringe patterns) associated respectively with the top and with the bottom of the TSV [23,24] and neglects the phase information.…”

Section: Introductionmentioning

confidence: 99%

“…Having studied the accuracy and limitations of the Fabry-Perot model, we apply it for an estimate of the maximum measurable depth of trenches and holes. The results obtained in section 2 -6 are checked and exploited experimentally in section 6, where we explain and compare our novel, electromagnetic interferogram evaluation procedure based on least squares applied to complex Fourier amplitudes with the common envelope-based one in the case of OCT applied to TSV [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

et al. 2019

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This article reports on progress in the analysis of Time-Domain Optical Coherence Tomography (OCT) applied to the dimensional metrology of Through Silicon Vias (TSV, vertical interconnect accesses in silicon, enabling 3D integration in micro-electronics) and estimates the deviations from earlier, simpler models. The considered TSV structures are 1D trenches and circular holes etched into silicon with a large aspect ratio. As a prerequisite for a realistic modelling, we work with spectra obtained from reference interferograms measured at a planar substrate, which fully includes the dispersion of the OCT apparatus. Applying a rigorous modal approach, we estimate the differences to a pure ray tracing technique. Accelerating our computations, we focus on the relevant fundamental modes and apply a Fabry-Perot model as an efficient approximation. Exploiting our results, we construct and present an iterative procedure based on the minimization of a merit function, which concludes TSV heights reliably, accurately and rapidly from measured interferograms.

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Section: Processing Of the Oct Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

et al. 2019

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“…For this particular case the RST was measured by a Fogale systems platform. The details of the measurement system have already been published elsewhere [4].…”

Section: B Wafer Bonding Thinning Modulementioning

confidence: 99%

Metrology and Inspection Requirements for Successful Stacking of Integrated Circuits

Halder

Miller

Puymbroeck

et al. 2014

IEEE Trans. Semicond. Manufact.

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New challenges for wafer metrology solutions have evolved with 3-D integrated circuit (3-D IC) manufacturing technology. The latter allows stacking single chips, electrically connecting them in the vertical direction, and forming a chip structure with significant advantages over traditional chips. However, before 3-D stacking of ICs comes to the mainstream production, numerous metrology issues need to be addressed. The purpose of this paper is to elucidate some of these challenges and also show how some of them can be surmounted. In this paper we discuss the critical in-line metrology needs for successfully stacking ICs.

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System Testing

Groß¹,

and²,

Müller³

2012

Handbook of Optical Systems

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Contact-free on-axis metrology for the fabrication and testing of complex optical systems

Cited by 10 publications

References 5 publications

Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

Metrology and Inspection Requirements for Successful Stacking of Integrated Circuits

System Testing

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