2022
DOI: 10.1016/j.mtchem.2022.101078
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Construction of S-Co-S internal electron transport bridges in Co-doped CuInS2 for enhancing photocatalytic CO2 reduction

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Cited by 7 publications
(3 citation statements)
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“…4e and f), none of the TS, 0.7hTS, 8CN/0.7hTS, 4T/8CN/0.7hTS, or 1Au-4T/8CN/0.7hTS samples showed H 2 or O 2 evolution, which confirms previous statements. 28,29 Astonishingly, it is evident that both H 2 and O 2 are formed on 8CN/0.7hTS under UV-visible light irradiation in a nearly stoichiometric ratio of 2 : 1, and the productivity is further enhanced by ≈3-fold on 1Au-4T/8CN/0.7hTS. Similar outcomes were also obtained when visible light irradiation was used (Fig.…”
Section: Resultsmentioning
confidence: 95%
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“…4e and f), none of the TS, 0.7hTS, 8CN/0.7hTS, 4T/8CN/0.7hTS, or 1Au-4T/8CN/0.7hTS samples showed H 2 or O 2 evolution, which confirms previous statements. 28,29 Astonishingly, it is evident that both H 2 and O 2 are formed on 8CN/0.7hTS under UV-visible light irradiation in a nearly stoichiometric ratio of 2 : 1, and the productivity is further enhanced by ≈3-fold on 1Au-4T/8CN/0.7hTS. Similar outcomes were also obtained when visible light irradiation was used (Fig.…”
Section: Resultsmentioning
confidence: 95%
“…They either attack organic compounds, expediting their degradation, or participate in the reduction of CO 2 , leading to the evolution of O 2 . 29,30 Consequently, determining the quantity of ˙OH radicals is highly valuable for understanding exciton separation and investigating efficient fuel production through CO 2 conversion. However, the photoinduced conversion of CO 2 poses challenges due to its linear geometry, lack of dipole movement, and high stability, making its activation a decisive step in the process.…”
Section: Introductionmentioning
confidence: 99%
“…Such a phenomenon is reasonable because the insertion of impurities into wide bandgap semiconductors can result in the impurity level, and this can produce more carriers to improve the conductivity and thus reduce R a . [45,46] Besides, the R a alteration trend of the Sn-BCO-0, Sn-BCO-1, Sn-BCO-2, Sn-BCO-3, and Sn-BCO-5 based sensors at different operating temperatures (from 100 to 250 °C) is shown in Figures S9 and S10b, Supporting Information. The R a values of all sensors show a decreasing trend while raising the operating temperature because of the intrinsic properties of all MOSs.…”
Section: Gas-sensing Performancesmentioning
confidence: 99%