Construction of 2D-layered quantum dots/2D-nanosheets heterostructures with compact interfaces for highly efficient photocatalytic hydrogen evolution

Jia, Ruiming; Lu, Honggang; Wang, Chenjie; Guan, Wei; Dong, Hua; Pang, Beili; Sui, Lina; Gan, Zhixing; Dong, Lifeng; Yu, Liyan

doi:10.1016/j.jcis.2021.09.103

Cited by 6 publications

(3 citation statements)

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“…As shown in Figure 6a, the EIS radius of Sv-ZIS is smaller than the original ZIS, indicating that S vacancies can reduce the interfacial transfer resistance (detailed parameters are listed in Table S5). In addition, the EIS radius of Mo-Sv-ZIS is less than Sv-ZIS and ZIS due to the presence of both doped Mo and S vacancies [41,56]. The EIS spectra of Mo-Sv-ZIS with different Mo doping levels are further investigated.…”

Section: Resultsmentioning

confidence: 99%

“…The EVB of the corresponding standard hydrogen electrodes relative to ZIS, Sv-ZIS and Mo-Sv-ZIS are then obtained based on the following equation: EVB, NHE = φ + EVB, XPS − 4.44 eV; here, φ is the power functional of the apparatus (5.1 eV). Therefore, for ZIS, Sv-ZIS and Mo-Sv-ZIS, the EVB, NHE are 2.04 eV, 2.24 eV and 2.02 eV, respectively [56]. The dynamics of excited carriers is studied through photoluminescence (PL) with time-resolved PL (TRPL).…”

Section: Resultsmentioning

confidence: 99%

“…Among these three samples, ZIS has the highest PL intensity, which suggests an effective recombination of photogenerated carriers, greatly limiting the photocatalytic activity. However, the PL intensity of Sv-ZIS is obviously reduced, which suggests that the sulfur vacancy can act as a carrier trap and promote the separation of photocarriers [56]. It is clear that the PL intensity of the Mo-doped Sv-ZIS further decreases, indicating that photogenerated carriers can be also rapidly captured by the undercoordinated Mo, thereby significantly inhibiting the recombination of photogenerated electron-hole pairs.…”

Section: Resultsmentioning

confidence: 99%

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Highly Efficient Photocatalytic Hydrogen Evolution over Mo-Doped ZnIn2S4 with Sulfur Vacancies

et al. 2022

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The introduction of impure atoms or crystal defects is a promising strategy for enhancing the photocatalytic activity of semiconductors. However, the synergy of these two effects in 2D atomic layers remains unexplored. In this case, the preparation of molybdenum-doped thin ZnIn2S4-containing S vacancies (Mo-doped Sv-ZnIn2S4) is conducted using a one-pot solvothermal method. The coordination of Mo doping and S vacancies not only enhances visible light absorption and facilitates the separation of photogenerated carriers but also provides many active sites for photocatalytic reactions. Meanwhile, the Mo-S bonds play function as high-speed channels to rapidly transfer carriers to the active sites, which can directly promote hydrogen evolution. Consequently, Sv-ZnIn2S4 with an optimized amount of Mo doping exhibits a high hydrogen evolution rate of 5739 μmol g−1 h−1 with a corresponding apparent quantum yield (AQY) of 21.24% at 420 nm, which is approximately 5.4 times higher than the original ZnIn2S4. This work provides a new strategy for the development of highly efficient and sustainable 2D atomic photocatalysts for hydrogen evolution.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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