2016
DOI: 10.1016/j.nanoen.2016.08.054
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Constructing TiO2 p-n homojunction for photoelectrochemical and photocatalytic hydrogen generation

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Cited by 245 publications
(123 citation statements)
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“…Combining the n-type Fe 2 O 3 and p-type Ca-Fe 2 O 3 ,atypical "V-shaped" Mott-Schottky plot is obtained, in which the coexistence of positive and negative slopes represents the presence of the p-n junction.T his "V-shaped" behavior can be interpreteda st wo capacitors in series, one for the hematite p-n junction interface and the otherf or the p-type Ca-Fe 2 O 3 /electrolyte interface, which accelerates the separation of holes and electrons [27]. After Ca doping, only negative slopes are observed, consistent with the typical characteristics of ptype semiconductors.…”
mentioning
confidence: 73%
“…Combining the n-type Fe 2 O 3 and p-type Ca-Fe 2 O 3 ,atypical "V-shaped" Mott-Schottky plot is obtained, in which the coexistence of positive and negative slopes represents the presence of the p-n junction.T his "V-shaped" behavior can be interpreteda st wo capacitors in series, one for the hematite p-n junction interface and the otherf or the p-type Ca-Fe 2 O 3 /electrolyte interface, which accelerates the separation of holes and electrons [27]. After Ca doping, only negative slopes are observed, consistent with the typical characteristics of ptype semiconductors.…”
mentioning
confidence: 73%
“…[10] These strategies mainly include morphology control, heterojunction/homojunction formation, ions doping, cocatalysts engineering, etc. [15] Yang et al rationally synthesized nitrogendoped ZnO nanowire arrays as photoanodes and the obtained photocurrent of ZnO:N increased by an order of magnitude than that of bare ZnO. Su et al [13] and Hong et al [14] proposed that the heterojunction formed between interface of WO 3 and BiVO 4 was conducive to charge transfer and recombination suppression.…”
Section: Introductionmentioning
confidence: 99%
“…The Mott‐Schottky plots with different testing condition were made in a standard three‐electrode system using TiO 2 NBs and TiO 2 homojunction as working electrode. As shown in Figure , the positive slope of liner MS plots indicates that TiO 2 NBs and TiO 2 homojunction were n‐type semiconductor . Furthermore, the plots were extrapolated to 1/C 2 = 0 to estimate the values of E fb , which is −0.82 and −0.56 V for TiO 2 NBs and TiO 2 homojunction, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The morphology of homojunction plays an important role in their performance . The homojunction established via two components with different morphologies has received great attention, which can take advantage of two different morphologies . The 1‐D materials, like NB, have the faster electron transport ability compared with other morphology and have been considered as an important component for constructing the high performance multifunctional junction.…”
Section: Introductionmentioning
confidence: 99%