2015
DOI: 10.1080/08927022.2015.1068941
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Constructingab initiomodels of ultra-thin Al–AlOx–Al barriers

Abstract: The microscopic structure of ultra-thin oxide barriers often plays a major role in modern nanoelectronic devices. In the case of superconducting electronic circuits, their operation depends on the electrical non-linearity provided by one or more such oxide layers in the form of ultra-thin tunnel barriers (also known as Josephson junctions). Currently available fabrication techniques manufacture an amorphous oxide barrier, which is attributed as a major noise source within the device. The nature of this noise i… Show more

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Cited by 14 publications
(22 citation statements)
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“…8,24,33 Consequently, the aging is less severe, due to the initial oxygen profile being more homogeneous and the stoichiometry closer to that of Al 2 O 3 . 11,19,37 …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…8,24,33 Consequently, the aging is less severe, due to the initial oxygen profile being more homogeneous and the stoichiometry closer to that of Al 2 O 3 . 11,19,37 …”
Section: Resultsmentioning
confidence: 99%
“…Our confinement strategy is another method to increase the as-formed oxygen concentration. 11,14,18,19 …”
Section: Introductionmentioning
confidence: 99%
“…However, an amorphous phase also contains 1-, 2-, 3-and 5-fold coordinated atoms[34], preventing straightforward determination from EELS spectra. Moreover, the fraction of the differently coordinated Al atoms depends strongly on the density and stoichiometry of the AlOx layer[54].Nevertheless, the pronounced tetrahedral peak indicates a shift towards low-coordinated atoms and lower oxygen content in EBPlas, EBPlas-UV and EBPlas-70|0.3 compared to the crystalline -Al2O3 phase. With increasing oxygen pressure for EBPlas-70|9.5 (yellow line in Figure 4a), the tetrahedral peak decreases in intensity and a weak intermediate-range order peak appears.…”
mentioning
confidence: 98%
“…Although the structure of Al/Al 2 O 3 systems has actively been explored over the decades both theoretically [12][13][14][15][16][17][18][19] and * manana.koberidze@aalto.fi experimentally [4,5,9,[20][21][22][23][24], an in-depth understanding of the interface properties is still an ongoing issue. Experimental observations have provided valuable information, for example, about the most probable crystallographic orientation relationship between Al and Al 2 O 3 at the interface [21,23], Al substrate roughness [4,20], the chemical state of the ions [25], oxide thickness distribution [9], bond lengths and coordinations of the atoms [5] at the interface, Al/O ratios for different oxide thicknesses [24], and different oxidation times and temperatures [25].…”
Section: Introductionmentioning
confidence: 99%
“…Pioneering DFT works addressed the atomic structures of differently constructed Al/Al 2 O 3 interfaces, bonding at the interface, adhesion energies, and the most stable terminations of the oxide at the interface [12][13][14]27,28]. More recent DFT studies are focused on improving junction models and on screening possibilities for improved adhesion, which is the measure of the structural stability of the system [16,17,19].…”
Section: Introductionmentioning
confidence: 99%