In order to characterize the material behavior of copper films deposited on silicon substrate, wafer curvature experiments were performed. The samples were exposed to repeated cycles in the range between -50°C to 400°C. The diagrams of film stress versus temperature show linear film behavior followed by plastic flow. Tn fact, a pronounced Bauschinger effect was observed which is attributed to back-stress arising from the dislocation structure in copper films. For better understanding of the underlying mechanisms, a new statistical dislocation model was developed which can nicely be fitted to experiments. However, the algorithm of the dislocation model appeared to be very time consuming during computation. Therefore, a second model was developed which can refit the experimental data with high accuracy using a fast algorithm. We call this model pressure dependent combined isotropic and kinematic hardening. This model was implemented in ANSYS with user-subroutine usermat.978-1-4799-9950-7/15/$31,00 ©2015 IEEE -1 / 7 -