Constant-Current Stressing of SiCr-Based Thin Film Resistors: Initial "Wearout" Investigation

Brynsvold, R.; Manning, Kevin

doi:10.1109/irws.2006.305207

Cited by 3 publications

(5 citation statements)

References 19 publications

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“…Further investigations are needed to make it clearer. TCR becomes more positive with the stress test is well in line with that is reported in literature [10].…”

Section: Sicr Tcr Stabilitysupporting

confidence: 92%

“…9), confirms that the open is the result of the bubble/delamination. Similar delamination has been reported in literature [10], where it is attributed to a wire bonding triggered damage.…”

Section: The Degradation Mechanism and Failure Modessupporting

confidence: 89%

“…The failure mode is dominated by void formation in the upstream side of the metal lines, especially at locations where the EM path is blocked by W-plugs or barrier layers in which no EM can take place. In literature, resistance decrease in SiCr-based films is attributed to migration of Si, or CrSi 2 grain formation and growth etc., in the SiCr material [10]. However, the results described so far cannot be explained by any of those speculations except for Si EM.…”

Section: The Degradation Mechanism and Failure Modesmentioning

confidence: 74%

“…Despite many investigations carried out on SiCr-based materials in material sciences [2][3][4][5][6][7][8][9], information on reliability of SiCr-based integrated thin-film resistors in IC processes has rarely been reported. In the work of Brynsvold et al [10] intensive investigations are carried out on the "wear-out" of SiCr-based resistors under current and temperature stress in their process technology. However no predictions of lifetimes under use conditions are provided because of the lacking of a proper degradation model.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Donnet

Grzegorczyk

et al. 2010

2010 IEEE International Reliability Physics Symposium

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The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.

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“…Further investigations are needed to make it clearer. TCR becomes more positive with the stress test is well in line with that is reported in literature [10].…”

Section: Sicr Tcr Stabilitysupporting

confidence: 92%

“…9), confirms that the open is the result of the bubble/delamination. Similar delamination has been reported in literature [10], where it is attributed to a wire bonding triggered damage.…”

Section: The Degradation Mechanism and Failure Modessupporting

confidence: 89%

Section: The Degradation Mechanism and Failure Modesmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Donnet

Grzegorczyk

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…Secondly, the integrated thin-film resistor (TFR), which has been widely researched [8]- [22] because of its various advantages such as near-zero TCR [8]- [11], low noise [12], [13], good matching property [13]- [15], and the ability to be electrically trimmed [16], although additional masks are required to form TFRs. However, previous research has focused only on the electrical properties [8]- [16] and the reliability issues [17]- [22] according to the mixing ratio of resistor materials. Therefore, the enough information about the electrical properties of TFR according to process conditions should be required to find the electrical characteristic variations of TFR for the process optimization.…”

mentioning

confidence: 99%

Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Kwon

Seol

Hong

et al. 2014

IEEE Trans. Electron Devices

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We investigated the characteristic variation of an integrated thin-film resistor (TFR), which is composed of silicon chromium (SiCr), according to process conditions and its effects on analog circuits. To improve TFR properties, such as temperature coefficient of resistance (TCR) and mismatch, the integrated TFR was examined under various process conditions. First, the sputtering power and the annealing temperature were optimized to control the TCR property. Secondly, the etching time and the dummy pattern were optimized to enhance the mismatch property. The measured TCR is −3.9 ppm/°C and the calculated mismatch slope from the standard deviation of resistance mismatch is 0.34%·µm. These results show that the fabricated TFR had near-zero TCR and a high matching constant. To verify the TFRs effects on analog circuits, low-pass filters (LPFs) were fabricated and measured as a test vehicle; the use of the optimized resistor considerably improved the performance of the resulting LPFs.Index Terms-Integrated thin-film resistor (TFR), low-pass filter (LPF), mismatch, silicon chromium (SiCr), temperature coefficient of resistance (TCR), TFR dummy pattern, TFR.

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Assessing SiCr resistor drift for automotive analog ICs

Stewart

Kimura

Ring

et al. 2021

2021 IEEE International Reliability Physics Symposium (IRPS)

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Constant-Current Stressing of SiCr-Based Thin Film Resistors: Initial "Wearout" Investigation

Cited by 3 publications

References 19 publications

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Assessing SiCr resistor drift for automotive analog ICs

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