Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Abstract

We investigated the characteristic variation of an integrated thin-film resistor (TFR), which is composed of silicon chromium (SiCr), according to process conditions and its effects on analog circuits. To improve TFR properties, such as temperature coefficient of resistance (TCR) and mismatch, the integrated TFR was examined under various process conditions. First, the sputtering power and the annealing temperature were optimized to control the TCR property. Secondly, the etching time and the dummy pattern were optimized to enhance the mismatch property. The measured TCR is −3.9 ppm/°C and the calculated mismatch slope from the standard deviation of resistance mismatch is 0.34%·µm. These results show that the fabricated TFR had near-zero TCR and a high matching constant. To verify the TFRs effects on analog circuits, low-pass filters (LPFs) were fabricated and measured as a test vehicle; the use of the optimized resistor considerably improved the performance of the resulting LPFs.Index Terms-Integrated thin-film resistor (TFR), low-pass filter (LPF), mismatch, silicon chromium (SiCr), temperature coefficient of resistance (TCR), TFR dummy pattern, TFR.

The effect of microstructures on the electrical properties of Cr–Si–C thin film resistors

“…Many reports have been written on the Cr-Si binary system. [16][17][18][19][20][21][22] However, resistivity and TCR are not sufficiently stable in a binary system, since the film microstructure is changed from Cr-Si amorphous to CrSi 2 crystal by postannealing at a low temperature of below 300 °C. 17,18) Thus, the thermally-induced fluctuation of the electrical properties during the post wafer process is a concern.…”

Near zero temperature coefficient of resistance in Ti:Si:O thin films deposited by magnetron co-sputtering

“…TFR components are commonly used to control current and divide voltage in analog circuits [3,4]. They exhibit low noise, good matching and the advantage of being introduced at any fabrication level and deposited over other components [5].…”

High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path

“…However, a considerably limited number of materials exhibit constant electrical resistivity with changes in temperature, and a nearzero temperature-coefficient of resistivity (NZ-TCR) behavior at an approximate room temperature. [9][10][11][12][13] In such materials, the mean free path reaches the separation of the atoms. 14,15) An antiperovskite manganese nitride is one of the materials which show NZ-TCR at an approximate room temperature.…”