Consolidation of nanostructured SiC with disorder–order transformation

Ohyanagi, Manshi; Yamamoto, Takakazu; Kitaura, Hidetoshi; Kodera, Yasuhiro; Ishii, Takeshi; Munir, Zuhair A.

doi:10.1016/j.scriptamat.2003.09.027

Cited by 93 publications

(52 citation statements)

References 8 publications

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“…29) There is yet another interesting method of synthesis at normal temperature. By mixing Si and C powders using a high energy (high speed) mill, Ohyanagi et al 30) obtained a mechanically alloyed powder of disordered ¢-SiC at room temperature. When the obtained powder was sintered by hot-pressing (HP) without any additive, the powder underwent a transition to the ¡-type and was densified at low temperature (1650°C).…”

Section: Siliconization Of Carbonmentioning

confidence: 99%

Silicon carbide powder and sintered materials

Tanaka

2011

J. Ceram. Soc. Japan

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Silicon carbide (SiC) was first industrially synthesized in 1894 and has been used as refractories, abrasives and high temperature furnace parts. The basic fabrication and sintering technologies were almost established by about 1970. Recently, sintered SiC has become a key material as it has been widely used in advanced industries of semiconductors and high precision machines. New fabrication methods for modern SiC powders and sintering methods are being developed on the bases of traditional methods. In this review, the original studies and recent developments have been given maximum possible emphasis, and in particular, basic points of view are introduced.

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Section: Siliconization Of Carbonmentioning

confidence: 99%

Silicon carbide powder and sintered materials

Tanaka

2011

J. Ceram. Soc. Japan

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“…For example, the hot isostatic pressing, 4 spark plasma sintering SPS , 8 two-step sintering, 9 and hot-forging 10 techniques have been utilized for fabricating nanocrystalline SiC ceramics.…”

Section: -7mentioning

confidence: 99%

“…Ohyanagi et al 8 investigated the sintering behavior of two kinds of nano-sized SiC powders without the use of sintering additives using the SPS technique: one prepared by mechanical alloying and the other a commercially available SiC nano-sized powder, which was equivalent to powder A see Table 1 used in this study. Only the mechanically alloyed powder led to successful densification Ĭ98!…”

Section: -7mentioning

confidence: 99%

Sinterability of Nano-Sized Silicon Carbide Powders

Kim

Lee

Mitomo

2006

J. Ceram. Soc. Japan

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The sinterability of three kinds of commercially available nano-sized SiC powders and a treated nano-sized SiC powder was investigated using Al 2 O 3 -Y 2 O 3 -CaO as a sintering additive. The commercially available, as-received nano-sized SiC powders were difficult to sinter to a relative density of 95! by conventional hot pressing. The effects of the free carbon and SiO 2 impurities in the starting powders on the sinterability of the nano-sized SiC powders were identical to those on the submicron SiC powders. However, both the extremely high free carbon content and low green density of the commercially available nano-sized SiC powders were responsible for their poor sinterability. The reduction of the free carbon content by oxidation and the control of the SiO 2 content by acid treatment were beneficial for enhancing the sinterability of the nano-sized SiC powder during liquid-phase sintering.

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“…It is expected that the microstructure of sintered SiC can be tailored by the proper selection of these two parameters. 4 The influence of defects on mechanical properties of ceramics has been thoroughly investigated experimentally, 5 but no theoretical model describing the relationship between deformations in the lattice, hardness, and grain size dependence exists. The lattice defect structure in microcrystalline SiC has been studied by microscopic and x-ray diffraction (XRD) methods.…”

Section: Introductionmentioning

confidence: 99%

Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

et al. 2007

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Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800°C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800°C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth during sintering is accompanied by a decrease in the population of planar faults and an increase in the density of dislocations. A critical crystallite size above which dislocations are more abundant than planar defects is suggested.

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Consolidation of nanostructured SiC with disorder–order transformation

Cited by 93 publications

References 8 publications

Silicon carbide powder and sintered materials

Silicon carbide powder and sintered materials

Sinterability of Nano-Sized Silicon Carbide Powders

Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

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