2007
DOI: 10.1557/jmr.2007.0162
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Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

Abstract: Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800°C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800°C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth … Show more

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Cited by 59 publications
(43 citation statements)
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“…in Fig. 4b in [114], which indicates that strain broadening of the profiles is caused by dislocations.…”
Section: Diamond and Silicon Carbidementioning
confidence: 84%
See 3 more Smart Citations
“…in Fig. 4b in [114], which indicates that strain broadening of the profiles is caused by dislocations.…”
Section: Diamond and Silicon Carbidementioning
confidence: 84%
“…Nanocrystalline SiC offers very high strength either as a binding phase in diamond composites or as a single phase material even at high temperatures [114]. Ultrafine grained bulk SiC samples are usually fabricated from nanopowders by sintering at high pressures and temperatures.…”
Section: Diamond and Silicon Carbidementioning
confidence: 99%
See 2 more Smart Citations
“…[29] The FWHM values are shown in Williamson-Hall plots after sintering at 1800°C at 2 and 5. [24] Authors called this plot the ''Wagner [25] plot,'' which is similar to the Williamson-Hall plot.…”
Section: B the Synergy Of Electron Microscopy And X-ray Line Profilementioning
confidence: 99%