Considerations of anodic bonding for capacitive type silicon/glass sensor fabrication

Rogers, Tony

doi:10.1088/0960-1317/2/3/008

Cited by 31 publications

(14 citation statements)

References 8 publications

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“…However, the strict requirements may change considerably the volume of glass, causing bowing or warping of the bonded wafer pair. Such mechanical deformation is problematic for optical coupling [78]. Moreover, oxygen anions are generated during anodic bonding at the Si/glass interface.…”

Section: Anodic Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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Section: Anodic Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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“…Consequently, in order to realize two kinds of bonding simultaneously, as well as guarantee a certain degree of insulation, the bonding side of the silicon wafer must be etched by CHF 3 before bonding. Considering the match of the thermal expansion coefficient to the silicon substrate, prexy#7740 glass is selected as the experiment material [13,35,36], which is significant to reduce the thermal residual stress.…”

Section: Fabrication Of the Capacitive Pressure Sensormentioning

confidence: 99%

Localized Si–Au eutectic bonding around sunken pad for fabrication of a capacitive absolute pressure sensor

Liu

Zhao

et al. 2013

Sensors and Actuators A: Physical

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“…Various glass chemistries have been investigated for different applications, but process limitations such as compositional gradients and electrolysis effects limit the possible choices for use in anodic bonding (14,15). While glasses such as Pyrex 7070 have some important benefits in terms of electrical resistivity, the migration of positive ions under bond conditions results in a significant compositional change that causes these wafers to deflect even if bonding to silicon does not occur (15).…”

Section: Alternatives For Controlling Residual Stresses With Anodic Bmentioning

confidence: 99%

Anisothermal Anodic Bonding: A Method to Control Global Curvature and Residual Stress

Yadav

Lin

Johnson³

et al. 2010

ECS Trans.

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The manipulation and characterization of residual stress and wafer curvature in anodically bonded structures is useful in improving the reliability of devices built on silicon on glass substrates. Conventional anodic bonding procedures lead to uncontrolled curvature of the bonded substrates as a result of locked-in residual stresses due to thermal expansion mismatch between silicon and Pyrex. A thermomechanical finite element model is used here to elucidate the effect of thermal variations in wafer temperature during anodic bonding. The results inform the development of an anisothermal recipe to control the resulting residual stresses and post bond wafer curvature and to understand the effects of process control on residual curvature. The model suggests that wafer curvature in anodically bonded substrates can be nearly eliminated by reducing the silicon bonding temperature slightly relative to the Pyrex temperature. A simple quantitative model to predict this effect shows promising agreement with experiments.

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Considerations of anodic bonding for capacitive type silicon/glass sensor fabrication

Cited by 31 publications

References 8 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Localized Si–Au eutectic bonding around sunken pad for fabrication of a capacitive absolute pressure sensor

Anisothermal Anodic Bonding: A Method to Control Global Curvature and Residual Stress

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