Connection rule of envelope functions at heterointerface

Akera, Hiroshi; Wakahara, S.; Ando, Tsuneya

doi:10.1016/0039-6028(88)90764-9

Cited by 32 publications

(5 citation statements)

References 10 publications

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“…In principle, this is equivalent to the decoupled band approximation leading to (2). But contrary to (6) the envelope function is not continuous in [11 to 131. This point will be discussed in the next section in connection with energy-dependent masses.…”

Section: Two Standard Approachesmentioning

confidence: 88%

Energy‐Dependent Connection Rules of Envelope Functions at Heterointerfaces

Paasch

Nguyen

Gobsch

1991

Physica Status Solidi (b)

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It is shown that the energy-dependent connection rule of Bastard can be derived in a simple manner. The method can be generalized to more general ones than the Kane band structure. Moreover, starting from a complete two-band model a classification of different former approaches of connection rules is presented and that one of Ishibashi et al. is derived with less restrictions and in a simple way. It is shown that the use of the two-band model modifies the tunneling probability as it is usually calculated from a one-component description.

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Section: Two Standard Approachesmentioning

confidence: 88%

Energy‐Dependent Connection Rules of Envelope Functions at Heterointerfaces

Paasch

Nguyen

Gobsch

1991

Physica Status Solidi (b)

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“…An agreement of the calculated 1 IO meV GPa-' (6&) is only weakly pressure dependent) with experiment is not necessarily expected both because of the uncertainties in a: and a: (experimentally one typically measures the shift of band gap with pressure, which is proportional to ( -a , + a"), rather than a, or a, separately), and because of the limitations of our model, which neglects band hybridization in the conduction band (Akera et al 1988).…”

Section: E%)mentioning

confidence: 89%

Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures

Warburton¹,

Beales²,

Mason³

et al. 1991

Semicond. Sci. Technol.

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“…The simulation solves the Schrö dinger equation using the envelope function approximation [3] with appropriate boundary conditions [31]. Effects of strain are also taken into account where needed.…”

Section: Experimental Set-upmentioning

confidence: 99%

Characterization of quantum well structures using surface photovoltage spectroscopy

Ashkenasy¹,

Leibovitch²,

Rosenwaks³

et al. 2000

Materials Science and Engineering: B

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In this work a novel method to characterize quantum well (QW) structures and devices is presented. The method is based on the well-known surface photovoltage spectroscopy (SPS) and on numerical simulations. It is shown that the surface photovoltage is sensitive to the electron hole energy transition levels in the well layer as well as to features of other regions of the structure. The photovoltaic response as function of well width is numerically studied and is found to increase with decreasing well width. As a result of the spectra analysis growth parameters such as quantum well width and ternary layer composition (both of quantum well and cladding layers) are accurately determined. In addition, structure properties such as electric fields and effective carriers lifetime at the well are estimated. Finally it is shown that operating device parameters such the lasing wavelength may also be obtained. The results demonstrate the power of SPS as a characterization method for QW structures and devices in a contactless and non-destructive manner.

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Connection rule of envelope functions at heterointerface

Cited by 32 publications

References 10 publications

Energy‐Dependent Connection Rules of Envelope Functions at Heterointerfaces

Energy‐Dependent Connection Rules of Envelope Functions at Heterointerfaces

Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures

Characterization of quantum well structures using surface photovoltage spectroscopy

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