Connection between the Meyer-Neldel rule and stretched-exponential relaxation

Chen, Y. F.; Huang, Shenglei

doi:10.1103/physrevb.44.13775

Cited by 48 publications

(25 citation statements)

References 15 publications

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“…There are quite a few references reporting this behavior in different magnitudes in semiconductor devices, such as the trap distribution in semiconductor samples. 13 Widenhorn et al calculated the MN rule for the dark current in a silicon CCD and found an energy value of 25.3 meV. 14 The same authors reported an energy value of 56.5 meV for forward current in diodes.…”

Section: -2mentioning

confidence: 99%

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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Perez

Castán

García

et al. 2015

Applied Physics Letters

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In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

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Section: -2mentioning

confidence: 99%

“…7 shows that this dependence fits to a linear relationship that follows the MeyerNeldel (MN) rule. 12,13 As it is known, this rule establishes 3. G/x-T curves for the UM1 sample biased at 0 V.…”

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confidence: 99%

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Perez

Castán

García

et al. 2015

Applied Physics Letters

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“…This relationship is called the Meyer-Neldel rule. 33,34 Found at the first time in 1937, this relation establishes that in magnitudes which follow an Arrhenius law there is dependence between the preexponential factor and the activation energy.…”

Section: -6mentioning

confidence: 99%

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Perez

Dueñas

Castán

et al. 2015

Journal of Applied Physics

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The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10 13 cm -2 and 10 14 cm -2 ) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E c -425 and E c -275 meV for implantation doses of 10 13 cm À2 and 10 14 cm À2, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E c and E c -450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known, the Meyer-Neldel rule typically appears in processes involving multiple excitations, like carrier capture and emission in deep levels, and it is generally observed in disordered systems. The obtained Meyer-Neldel energy value, 15.19 meV, is very close to the value obtained in multicrystalline silicon samples contaminated with iron (13.65 meV), meaning that this energy value could be associated to the phonons energy in this kind of substrates. V C 2015 AIP Publishing LLC. [http://dx

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“…Chen and Huang 17 and Crandall 18 suggested a connection between the MeyerNeldel rule and the stretched-exponential relaxation. Other authors suggested a link between the Meyer-Neldel rule and a field-dependent mobility.…”

Section: ͑8͒mentioning

confidence: 99%

Electronic transport in field-effect transistors of sexithiophene

Stallinga

Gomes

Biscarini

et al. 2004

Journal of Applied Physics

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Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors J. Appl. Phys. 97, 083714 (2005) The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown.

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Connection between the Meyer-Neldel rule and stretched-exponential relaxation

Cited by 48 publications

References 15 publications

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Electronic transport in field-effect transistors of sexithiophene

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