Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

Utsumi, Wataru; Saitoh, Hiroyuki; Kaneko, Hiroshi; Watanuki, Tetsu; Aoki, Katsutoshi; Shimomura, Osamu

doi:10.1038/nmat1003

Cited by 175 publications

(131 citation statements)

References 11 publications

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“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 pressure induces bonding changes [587,588], amorphization [589], changes in quencheability [74,590], metallization [591], and novel structures [393,[592][593][594][595][596][597][598][599]. Many exotic nitrides have been synthesized under HP [22, [600][601][602][603][604], including new durable noble Ir, Pt, and Os metal nitrides synthesized at HP coupled with laser heating [605][606][607]. These new compounds have bulk moduli comparable to those of traditional superhard materials.…”

Section: High Pressure Chemistrymentioning

confidence: 99%

High-pressure studies with x-rays using diamond anvil cells

2016

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Pressure profoundly alters all states of matter. The symbiotic development of ultrahighpressure diamond anvil cells, to compress samples to sustainable multi-megabar pressures; and synchrotron x-ray techniques, to probe materials' properties in situ, has enabled the exploration of rich high-pressure (HP) science. In this article, we first introduce the essential concept of diamond anvil cell technology, together with recent developments and its integration with other extreme environments. We then provide an overview of the latest developments in HP synchrotron techniques, their applications, and current problems, followed by a discussion of HP scientific studies using x-rays in the key multidisciplinary fields. These HP studies include: HP x-ray emission spectroscopy, which provides information on the filled electronic states of HP samples; HP x-ray Raman spectroscopy, which probes the HP chemical bonding changes of light elements; HP electronic inelastic x-ray scattering spectroscopy, which accesses high energy electronic phenomena, including electronic band structure, Fermi surface, excitons, plasmons, and their dispersions; HP resonant inelastic x-ray scattering spectroscopy, which probes shallow core excitations, multiplet structures, and spin-resolved electronic structure; HP nuclear resonant x-ray spectroscopy, which provides phonon densities of state and time-resolved Mössbauer information; HP x-ray imaging, which provides information on hierarchical structures, dynamic processes, and internal strains; HP x-ray diffraction, which determines the fundamental structures and densities of single-crystal, polycrystalline, nanocrystalline, and non-crystalline materials; and HP radial x-ray diffraction, which yields deviatoric, elastic and rheological information. Integrating these tools with hydrostatic or uniaxial pressure media, laser and resistive heating, and cryogenic cooling, has enabled investigations of the structural, vibrational, electronic, and magnetic properties of materials over a wide range of pressure-temperature conditions.

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Section: High Pressure Chemistrymentioning

confidence: 99%

High-pressure studies with x-rays using diamond anvil cells

2016

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“…9 1997) 10 . The congruent melting of gallium nitride has been achieved recently under the severe experimental conditions (the pressure of 6 Gpa and temperature about 2200 • C (Utsumi et al, 2003) (so far grown crystals are smaller than 100 µm). Bulk single group III-nitride crystals could be grown either from solution or from vapour phase.…”

Section: Growth Of Bulk Group III Nitride Crystals From Liquid and Vamentioning

confidence: 99%

Development of 2" AlN Substrates Using SiC Seeds

Avdeev¹,

Chemekova²,

Мохов³

et al. 2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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“…Indeed, melt-based growth approaches are being pursued, either by dissolving N 2 in a gallium melt 1 (the High Nitrogen Pressure Solution Growth, or HNPSG method), or by melting and recrystallizing. 2 In either case, the pressures are extreme and the kinetics is very slow, requiring many weeks at these conditions to grow research-sized platelets. It is unlikely that either of these methods will develop into a manufacturable technique capable of satisfying the demands of US military and consumer applications.…”

Section: Introductionmentioning

confidence: 99%

Molten salt-based growth of bulk GaN and InN for substrates.

Waldrip

2007

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An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The novel techniques described herein rely on the production of the nitride precursor (N 3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (February 2006-September 2006 focused on establishing that mass transport of GaN occurs in molten LiCl, the construction of a larger diameter electrochemical cell, the design, modification, and installation of a made-to-order glove box (required for handling very hygroscopic LiCl), and the feasibility of using room temperature molten salts to perform nitride chemistry experiments. 4 ACKNOWLEDGMENTS

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Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

Cited by 175 publications

References 11 publications

High-pressure studies with x-rays using diamond anvil cells

High-pressure studies with x-rays using diamond anvil cells

Development of 2" AlN Substrates Using SiC Seeds

Molten salt-based growth of bulk GaN and InN for substrates.

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