Conformal Transparent Conducting Oxides on Black Silicon

Otto, Martin; Kröll, Matthias; Käsebier, Thomas; Lee, Seung‐Mo; Putkonen, Matti; Salzer, Roland; Miclea, P.-T.; Wehrspohn, Ralf B.

doi:10.1002/adma.201002515

Cited by 57 publications

(43 citation statements)

References 18 publications

(25 reference statements)

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“…[14,15] As an outstanding 1D nanostructure, ZnO NWs have a high transparency due to the wide bandgap, appropriate refractive index (n ≈ 2 at 600 nm), and the capability of forming a textured coating on virtually any substrate. [16][17][18][19] These characteristics make it an attractive dielectric ARC material for PV applications. By the integration of ZnO NWs with optical fibers and quartz waveguides, an enhancement of the efficiency by a factor of 4-6 has been shown by utilizing a three-dimensional approach.…”

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confidence: 99%

Hybridizing ZnO Nanowires with Micropyramid Silicon Wafers as Superhydrophobic High‐Efficiency Solar Cells

Liu

Das

et al. 2011

Advanced Energy Materials

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A novel hierarchical structure integrating ZnO‐nanowire arrays on Si micropyramids is reported as an effective antireflection layer for improving the solar‐cell conversion efficiency. This structure displays a broadband reflection suppression with an average weighted reflectance of 3.2%. Solar cells based on the hierarchal structure show a high conversion efficiency of 16.0%, as well as a superior self‐cleaning property.

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confidence: 99%

Hybridizing ZnO Nanowires with Micropyramid Silicon Wafers as Superhydrophobic High‐Efficiency Solar Cells

Liu

Das

et al. 2011

Advanced Energy Materials

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“…19 Three different b-Si structures were fabricated for this work by varying process pressure or etching time. Nanostructuring was applied bifacially to produce identical surface conditions on both the front and rear of polished Czochralski-grown (CZ) Si wafers.…”

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confidence: 99%

Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

Otto¹,

Kröll²,

Käsebier³

et al. 2012

Applied Physics Letters

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153

141

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We investigate the optical and opto-electronic properties of black silicon (b-Si) nanostructures passivated with Al 2O 3. The b-Si nanostructures significantly improve the absorption of silicon due to superior anti-reflection and light trapping properties. By coating the b-Si nanostructures with a conformal layer of Al 2O 3 by atomic layer deposition, the surface recombination velocity can be effectively reduced. We show that control of plasma-induced subsurface damage is equally important to achieve low interface recombination. Surface recombination velocities of S eff 13 cm / s have been measured for an optimized structure which, like the polished reference, exhibits lifetimes in the millisecond range

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“…The diameter of the nanograss is about 200e300 nm. Recently, similar incensement of the surface roughness has been revealed in black silicon prepared by reactive ion etching approach, when compared with the conventional planar counter electrode [25,26]. Thus, similarly it can be deduced from the surface morphologies that, the nanograss-structured counter electrode with particularly large surface area and unique ordered nanostructure can decrease the resistances of charge transfer, accelerate the electrolyte diffusion and increase the light absorption, which are determining factors affecting the DSSC performance.…”

Section: The Surface Morphology Of the Counter Electrodementioning

confidence: 96%