Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy

Sánchez, Jorge; Izpura, I.; Tijero, J. M. G.; Muñoz, E.; Cho, Soo-Haeng; Majerfeld, A.

doi:10.1063/1.1445278

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…It is relevant to mention that this behavior is contrary to that observed in other previously published work where the piezoelectric constant magnitude in In 1−x Ga x As QWs increases as temperature increases, for which no convincing explanation has been presented [13][14][15][16][17] . To gain more insight into this contradictory aspect, we further investigate the behavior regarding the temperature of the 1S e-hh ER total Stark shift under SCC ΔE s sc .…”

Section: (Marks)contrasting

confidence: 99%

“…3 (marks), do not exceed the limits of the error bars, which validates the precision wherewith e 14 e , Āehh , and ΔE s sc are estimated. In particular, the extracted e 14 e values at 18, 23, and 28°C are −0.0536 ± 0.0041, −0.0534 ± 0.0040, and −0.0531 ± 0.0040 C • m −2 , respectively, i.e., in the analyzed temperature range, the result accuracy is approximately equal to ±0.004 C • m −2 , which is similar to that obtained by other methods extracting the e 14 e value [13] . Moreover, as expected, these e 14 e values, and in general all those reported in the upper graph of Fig.…”

Section: (Marks)supporting

confidence: 86%

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Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Soto-Ortiz,

Torres-Miranda

2023

中国光学快报

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Here, we present a study of the effective piezoelectric constant (e 14 e ) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e 14 e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e 14 e = −0.0534 ± 0.0040 C • m −2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In 0.687 Ga 0.313 As/In 0.807 Ga 0.193 As 0.304 P 0.696 QWs. Unlike previously published research, where e 14 e magnitude increased as temperature rised, we extracted an e 14 e magnitude that decreased as temperature increased.

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Section: (Marks)contrasting

confidence: 99%

Section: (Marks)supporting

confidence: 86%

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Soto-Ortiz,

Torres-Miranda

2023

中国光学快报

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“…In sample B1 with isotropic morphology, the temperature dependence of electron mobility anisotropy is mainly affected by the PE scattering and the phonon scattering. For the PE scattering, the piezoelectric coefficient e 14 usually varies with the temperature [30,31] , so the PE scattering is temperature dependent. For example, the piezoelectric coefficient e 14 is found to be proportional to the temperature in the In x Ga 1-x As well [30,31] .…”

Section: Magneto-transport Measurementsmentioning

confidence: 99%

“…For the PE scattering, the piezoelectric coefficient e 14 usually varies with the temperature [30,31] , so the PE scattering is temperature dependent. For example, the piezoelectric coefficient e 14 is found to be proportional to the temperature in the In x Ga 1-x As well [30,31] . With increasing In composition from 0.12 to 0.21, the temperature dependence of piezoelectric coefficient becomes stronger [32] .…”

Section: Magneto-transport Measurementsmentioning

confidence: 99%

Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates

Wei¹,

Wang²,

Zhao³

et al. 2022

J. Semicond.

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The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated. Large electron mobility anisotropy is found for the sample with anisotropic morphology, which is mainly induced by the threading dislocations in the InAs layer. For the samples with isotropic morphology, the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering. At low temperature (below transition temperature), the piezoelectric scattering is enhanced with the increase of temperature, leading to the increase of electron mobility anisotropy. At high temperature (above transition temperature), the phonon scattering becomes dominant. Because the phonon scattering is isotropic, the electron mobility anisotropy in all the samples would be reduced. Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.

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“…In the linear regime, the piezoelectric polarization vector is connected to the strain state of the system via the piezoelectric coefficient e 14 . However, nonlinear contributions to the piezoelectric polarization fields have been observed in experimental studies on (111)-oriented InGaAs QWs (Dickey et al 1998, Cho et al 2001, Sánchez et al 2002. To take these nonlinear effects in the piezoelectric polarization into account, different approaches have been proposed in the literature (Bester et al 2006a, Migliorato et al 2006.…”

Section: Semiconductor Materials With a Lack Of Inversion Symmetrymentioning

confidence: 99%

Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adaptedk⋅pHamiltonian

Marquardt¹,

O’Reilly

Schulz³

2013

J. Phys.: Condens. Matter

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In this work, we present and evaluate a (111)-rotated eight-band k ⋅p Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation of single-band effective mass and eight-band k ⋅p models, to investigate the capabilities of these models for the description of electronic properties of (111)-grown zinc-blende quantum dots. Moreover, the influence of second-order piezoelectric contributions on the polarization potential in such systems is studied. The description of the electronic structure of nanostructures grown on (111)-oriented surfaces can now be achieved with significantly reduced computational costs in comparison to calculations performed using the conventional (001)-oriented models.

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Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy

Abstract: Articles you may be interested inTemperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells

Cited by 12 publications

References 16 publications

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates

Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adaptedk⋅pHamiltonian

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