Confinement effect in a quantum well dot induced by an InP stressor

Tulkki, Jukka; Heinämäki, A.

doi:10.1103/physrevb.52.8239

Cited by 101 publications

(88 citation statements)

References 10 publications

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“…17. Later on, Tulkki et al 18 examined the influence of a surface stressor on the optical properties of a buried QW and obtained good agreement with corresponding experiments by Lipsanen et al 19 Davies 20 and Schoenfeldt et al 21 developed the idea that a subsurface stressor ͓Fig. 1͑b͔͒ could be used as a tool to modify the confinement in nearby QW in the case of zincblende structures.…”

Section: Introductionmentioning

confidence: 74%

Buried stressors in nitride semiconductors: Influence on electronic properties

Романов

Waltereit

Speck

2005

Journal of Applied Physics

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An analysis is presented on the effect of the strain field originating from a subsurface stressor ͑point source of dilatation or a dilatating ellipsoidal inclusion͒ on the electronic properties of nitride semiconductors. With good accuracy, real quantum dots can be modeled as such stressors. We consider the following material structure design: a uniform semi-infinite GaN matrix with a buried stressor or a GaN matrix with a single ͑In,Ga͒N quantum well, which is grown pseuodomorphically between the stressor and the free surface. We utilize isotropic elasticity to determine the strain field in the structures under investigation. We then apply a k·p perturbation theory approach to examine the shifts of the conduction and valence band edges caused by the stressor. We find lateral confinement for electrons and holes, which can be proposed for the realization of strain-induced quantum dots in the quantum well.

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Section: Introductionmentioning

confidence: 74%

Buried stressors in nitride semiconductors: Influence on electronic properties

Романов

Waltereit

Speck

2005

Journal of Applied Physics

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“…The direct relaxation is assisted by the funnel shaped deformation and piezoelectric potential minima in the barriers. [22] As the holes are predominantly confined in the deep PEP minima, the radiative recombination starts only when these minima are already filled with holes. A saturated QD is consequently strongly polarized during continuous generation and recombination.…”

Section: A Luminescence During Continuous Pumpingmentioning

confidence: 99%

“…[22] In this work we have carried out extensive three-dimensional modeling of the electroelastic, electronic and photonic properties of SIQD's. We emphasize the role of the PEP, not present in previous two-dimensional models of the carrier dynamics.…”

Section: Electroelasticity and Band Structurementioning

confidence: 99%

Cooling of radiative quantum-dot excitons by terahertz radiation: A spin-resolved Monte Carlo carrier dynamics model

Boxberg¹,

Tulkki²,

Yusa

et al. 2007

Phys. Rev. B

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We have developed a theoretical model to analyze the anomalous cooling of radiative quantum dot (QD) excitons by THz radiation reported by Yusa et al [Proc. 24th ICPS, 1083(1998]. We have made three-dimensional (3D) modeling of the strain and the piezoelectric field and calculated the 3D density of states of strain induced quantum dots. On the basis of this analysis we have developed a spin dependent Monte Carlo model, which describes the carrier dynamics in QD's when the intraband relaxation is modulated by THz radiation. We show that THz radiation causes resonance transfer of holes from dark to radiative states in strain-induced QD's. The transition includes a spatial transfer of holes from the piezoelectric potential mimima to the deformation potential minimum. This phenomenon strongly enhances the QD ground state luminescence at the expense of the luminescence from higher states. Our model also reproduces the delayed flash of QD ground state luminescence, activated by THz radiation even ∼ 1 s after the carrier generation.Our simulations suggest a more general possibility to cool the radiative exciton subsystem in optoelectronic devices.

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“…The strain arising from the large lattice mismatch is accommodated by both the islands and the substrate. 9 The calculations 6 showed that the strain induced by an InP island on the underlying QW is tensile below the island and compressive under the edges of the island, thus creating a cylindrical, nearly parabolic confinement potential in the QW plane. In this letter the use of self-organized InP islands to create strain-induced QDs into GaInP/AlGaInP QWs is reported.…”

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confidence: 99%

“…5 Calculated strain distribution, confinement potential, and energy levels in the structure corresponded well with the measured PL spectra. 6 Also time-resolved PL 7 and magnetoluminescence 8 measurements were performed on the GaInAs QDs. The formation of InP islands on GaAs and GaInP layers by coherent Stranski-Krastanow growth mode 9 has been investigated in several reports.…”

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confidence: 99%

Red luminescence from strain-induced GaInP quantum dots

Sopanen¹,

Taskinen²,

Lipsanen³

et al. 1996

Applied Physics Letters

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The strain of self-organized InP islands is used to induced quantum dots in near-surface GaInP/ AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630-700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

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Confinement effect in a quantum well dot induced by an InP stressor

Cited by 101 publications

References 10 publications

Buried stressors in nitride semiconductors: Influence on electronic properties

Buried stressors in nitride semiconductors: Influence on electronic properties

Cooling of radiative quantum-dot excitons by terahertz radiation: A spin-resolved Monte Carlo carrier dynamics model

Red luminescence from strain-induced GaInP quantum dots

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