Confined and interface acoustic phonons in a quantum wire

Nishiguchi, Norihiko

doi:10.1103/physrevb.50.10970

Cited by 42 publications

(39 citation statements)

References 28 publications

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“…However, different from the bulk case, the phonon spectrum in nanowires becomes highly non-trivial due to the mixing of the branches by the boundaries, 45 leading to a strong modification of the relaxation time.…”

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Spin dynamics in InAs nanowire quantum dots coupled to a transmission line

2008

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We study theoretically electron spins in nanowire quantum dots placed inside a transmission line resonator. Because of the spin-orbit interaction, the spins couple to the electric component of the resonator electromagnetic field and enable coherent manipulation, storage, and read-out of quantum information in an all-electrical fashion. Coupling between distant quantum-dot spins, in one and the same or different nanowires, can be efficiently performed via the resonator mode either in real time or through virtual processes. For the latter case we derive an effective spin-entangling interaction and suggest means to turn it on and off. We consider both transverse and longitudinal types of nanowire quantum-dots and compare their manipulation timescales against the spin relaxation times. For this, we evaluate the rates for spin relaxation induced by the nanowire vibrations (phonons) and show that, as a result of phonon confinement in the nanowire, this rate is a strongly varying function of the spin operation frequency and thus can be drastically reduced compared to lateral quantum dots in GaAs. Our scheme is a step forward to the formation of hybrid structures where qubits of different nature can be integrated in a single device.

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“…. The functions f i ns (r) depend only on the radius 45,47 and χ i are normalization factors. The effective spin-phonon interaction can be found following the same procedure as that used for deriving the spin-photon interaction for both cases in Fig.1. A. Spin-relaxation in strongly-longitudinal confined QDs…”

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Spin dynamics in InAs nanowire quantum dots coupled to a transmission line

2008

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“…1,2 They attract attention in a wide range of fields by virtue of their potential applications, such as biological and chemical sensors. [9][10][11][12] It has been reported that in ultrathin plate structures, such acoustic phonon modulation enhances the scattering, 13 and consequently, the electron scattering rate is larger than that given by the bulk phonon approximation, [14][15][16][17] and hence the electron mobility is smaller. Electrons in nanowires are confined laterally and travel one-dimensionally along this axis.…”

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Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

Hattori

Uno

Nakazato

et al. 2010

Journal of Applied Physics

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Articles you may be interested inAtomistic modeling of electron-phonon interaction and electron mobility in Si nanowires J. Appl. Phys. 111, 063720 (2012); 10.1063/1.3695999Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxidesemiconductor field-effect transistors Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering J. Appl. Phys.A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electronphonon interactionsWe theoretically investigate the interaction between modulated acoustic phonons and electrons in a free-standing cylindrical semiconductor nanowire and calculate the electron mobility limited by modulated acoustic phonons in a ͓001͔-oriented silicon nanowire ͑SiNW͒ at room temperature. The mobility is smaller than that limited by bulk phonons because form factors increase due to acoustic phonon modulation. By expressing the form factor increase through an analytical formula, we derive a compact formula for mobility that is valid for a nanowire in which most electrons occupy the lowest subband, regardless of the wire material. The compact formula achieves excellent accuracy for a ͓001͔-oriented SiNW with a radius of less than 2 nm at an electron density of 2 ϫ 10 9 m −1 , and its applicable radius increases with decreasing electron density

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“…The researches on the acoustic phonon modulation and its impact on electron-phonon interaction have so far been reported for a free-standing slabs [1][2][3][4][5][6][7], III-V semiconductor heterostructures [8][9][10][11], Si/SiO 2 interface in metal-oxidesemiconductor field-effect-transistors (MOSFETs) [12,13], double-gate or silicon-on-insulator (SOI) MOSFETs [14], free-standing wires [15][16][17][18][19][20][21][22][23][24][25][26], layered wires [27][28][29][30][31][32][33], onedimensional quantum dot array (wire heterostructures) [34,35], free-standing dots [36], embedded spheres (dots) [37][38][39], hollow spheres and nanotubes [40]. All of those analyses are based on the fundamental physics of elastic waves in solids [41,42] and basic theory of solid-state physics.…”

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confidence: 99%