“…GaAs and Ga 0.7 Al 0.3 As quantum wells, as well as in the one-and two-photon absorption processes. The present result is in good agreement with the results of previous papers [33,34,[39][40][41][42][43]. This increase behavior of the half-width is explained from the increase of the probability of electron−phonon interaction when magnetic field increases.…”
“…GaAs and Ga 0.7 Al 0.3 As quantum wells, as well as in the one-and two-photon absorption processes. The present result is in good agreement with the results of previous papers [33,34,[39][40][41][42][43]. This increase behavior of the half-width is explained from the increase of the probability of electron−phonon interaction when magnetic field increases.…”
“…These phonons' spectrum may be considerable for several of the nondestructive techniques of microstructure diagnostics where the propagation of these phonons is also employed. 37,38 In recent years there has been considerable interest in the electron-acoustic-phonon interaction in QW structures such as the PACR in a free-standing QW that has been studied by J. S. Bhat et al; 39 the energy loss rate of hot charge carriers caused by conning acoustic-phonons in the QW structure has also been reported by J. S. Bhat et al; 40 the CR line-widths due to electron-acoustic phonon interaction in a QW have been examined by N. L. Kang et al; 41 the PACR in QWs via the absorption of multi-photons 42 and the connedacoustic-PACR via absorption of multi-photon in GaAs QW structure 43 have been studied by H. V. Phuc et al However, in these studies, the inuence of the potential shape on the FWHM due to EAP interaction has not been taken into account in detail. Besides, we have also examined the scattering process of inter-and intra-subband electrons due to acoustic phonons in a rectangular QW; the result shows that the contribution from the acoustic modes to the intrasubband electron scattering process is more dominant than that of the intersubband one.…”
In this work, we report a detailed comparison of electron–acoustic-phonon (EAP) interaction strength in symmetric (parabolic) and asymmetric (semi-parabolic) quantum-wells (QWs) for both GaAs and GaN materials.
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