Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

Electrical properties of LiF-based thin films containing gold and copper nanoclusters

“…An increase in the Cu nanoclus ter concentration (D ≈ 0.93 at λ = 330 nm, curve 5 in The slope of the I-V characteristic in double loga rithmic coordinates is tanα = l + 1 ≈ 1 eV. Ohmic con tact is observed when tanα ≈ 1, indicating the presence of equilibrium carriers in concentration n 0 on a film's surface, resulting in surface current I: (2) where μ is carrier mobility, U is voltage, and L is the distance between electrodes. Such carriers can origi nate from a group of very small donors, e.g., the sur face states of Cu nanoclusters.…”

“…Both the electron and ion components in the conduc tivity of such structures can be used in developing dif ferent nano optoelectronic devices, e.g., photovoltaic cells, IR detectors, and resistive switches (memris tors). The memristor effect observed in TiO x , NiO x , CuO x , and HfO x oxides [2][3][4][5] consists of two states of resistance: low resistance at positive voltages and high resistance at negative ones. Bipolar conducting state switching is observed in metal insulator semiconduc tor (MIS) structures.…”

“…Bipolar conducting state switching is observed in metal insulator semiconduc tor (MIS) structures. Drawbacks of these structures are the high initial conductivity of the insulator, which prevents us from distinguishing between the open and closed states, and nonuniformity of the insulator material due to its polycrystalline structure [2]. Not all principles of the memristor operation have been estab lished as of late.…”