Conductivity of layers of a chalcogenide glassy semiconductor Ge2Sb2Te5 in high electric fields

Lebedev, E. A.; Kozykhin, S. A.; Konstantinova, N. N.; Kazakova, L. P.

doi:10.1134/s1063782609100157

Cited by 9 publications

(2 citation statements)

References 8 publications

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“…The underlying mechanism is commonly related to the field-induced increase in free carrier concentration, as reflected in Refs. [16][17][18][19][20][21][22][23] which proposes hopping conduction).…”

Section: Introductionmentioning

confidence: 99%

Electrical conduction in chalcogenide glasses of phase change memory

Nardone¹,

Simon²,

Karpov³

et al. 2012

Journal of Applied Physics

141

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Electrical conduction in chalcogenide glasses of phase change memory App. Phys. Rev. 2012, 8 (2012 Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory J. Appl. Phys. 112, 064901 (2012) Highly sensitive tactile sensors integrated with organic transistors Appl. Phys. Lett. 101, 103308 (2012) Highly sensitive tactile sensors integrated with organic transistors APL: Org. Electron. Photonics 5, 206 (2012) On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks Amorphous chalcogenides have been extensively studied over the last half century due to their application in rewritable optical data storage and in non-volatile phase change memory devices. Yet, the nature of the observed non-ohmic conduction in these glasses is still under debate. In this review, we consolidate and expand the current state of knowledge related to dc conduction in these materials. An overview of the pertinent experimental data is followed by a review of the physics of localized states that are peculiar to chalcogenide glasses. We then describe and evaluate twelve relevant transport mechanisms with conductivities that depend exponentially on the electric field. The discussed mechanisms include various forms of Poole-Frenkel ionization, Schottky emission, hopping conduction, field-induced delocalization of tail states, space-charge-limited current, field emission, percolation band conduction, and transport through crystalline inclusions. Most of the candidates provide more or less satisfactory fits of the observed non-linear IV data. Our analysis calls upon additional studies that would enable one to discriminate between the various alternative models. V C 2012 American Institute of Physics. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Electrical conduction in chalcogenide glasses of phase change memory

Nardone¹,

Simon²,

Karpov³

et al. 2012

Journal of Applied Physics

141

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“…On this basis, it was proposed that the I-V characteristic is described by the phenomenological expression (1) A dependence similar to (1) was experimentally observed for the Ge 2 Sb 2 Te 5 composition (Fig. 20) [64,65].…”

Section: Switching Effectmentioning

confidence: 88%

Physics of switching and memory effects in chalcogenide glassy semiconductors

Bogoslovskiy

Tséndin

2012

Semiconductors

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Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Sovtus

Mynbaev

2020

J. Phys.: Conf. Ser.

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For the Ge-Sb-Te system, the heat equation describing the current filament in the cylindrical semiconductor plate is approximately solved. The scale of the lateral current flowing perpendicular to the filament is estimated. It is shown that for the infinitely long times, the current in the filament is proportional to the square of the maximum temperature at the centre of the filament and inversely proportional to the applied electric field. It is established that the lateral current is small as compared to the current flowing in the filament, so the occurrence of lateral filaments growing from the main filament is unlikely.

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Conductivity of layers of a chalcogenide glassy semiconductor Ge2Sb2Te5 in high electric fields

Cited by 9 publications

References 8 publications

Electrical conduction in chalcogenide glasses of phase change memory

Electrical conduction in chalcogenide glasses of phase change memory

Physics of switching and memory effects in chalcogenide glassy semiconductors

Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

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