2022
DOI: 10.1021/acs.nanolett.2c00276
|View full text |Cite
|
Sign up to set email alerts
|

Conductive Phosphine Oxide Passivator Enables Efficient Perovskite Light-Emitting Diodes

Abstract: Recently, surface passivation has been proved to be an essential approach for obtaining efficient and stable perovskite light-emitting diodes (Pero-LEDs). Phosphine oxides performed well as passivators in many reports. However, the most commonly used phosphine oxides are insulators, which may inhibit carrier transport between the perovskite emitter and charge-transporter layers, limiting the corresponding device performance. Here, 2,7-bis­(diphenylphosphoryl)-9,9′-spirobifluorene (SPPO13), a conductive molecul… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

3
81
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 77 publications
(84 citation statements)
references
References 33 publications
3
81
0
Order By: Relevance
“…13,45 The formation of such interfacial defects is mostly correlated with the poor affinity of each layer at the interfaces, which increases the difficulties in film deposition and thus may lead to film discontinuity with pinholes. 46 Such interfacial defects not only exacerbate non-radiative recombination, 7,45 but also impose an adverse impact on the efficient injection of charge carriers. 47 The losses associated with interface-induced recombination could be mitigated by defect passivation and interfacial engineering.…”
Section: Non-radiative Recombination Pathwaysmentioning
confidence: 99%
“…13,45 The formation of such interfacial defects is mostly correlated with the poor affinity of each layer at the interfaces, which increases the difficulties in film deposition and thus may lead to film discontinuity with pinholes. 46 Such interfacial defects not only exacerbate non-radiative recombination, 7,45 but also impose an adverse impact on the efficient injection of charge carriers. 47 The losses associated with interface-induced recombination could be mitigated by defect passivation and interfacial engineering.…”
Section: Non-radiative Recombination Pathwaysmentioning
confidence: 99%
“…Benefiting from the excellent optoelectronic properties, such as a high photoluminescence quantum yield (PLQY), narrow full width at half-maximum (FWHM), high color purity, and tunable band gaps, all-inorganic lead halide perovskites (CsPbX 3 , X = Cl, Br, and I) have been extensively investigated in solid-state lighting and high-definition displays in the past few years. Due to the high defect tolerance relative to traditional metal chalcogenide semiconductor dots, CsPbX 3 nanocrystals (NCs) show higher PLQY without complex core–shell passivation. , To date, the PLQY of bromide- and iodide-based CsPbX 3 with green and red emission has been reported to achieve unity, respectively. , Besides, the external quantum efficiencies (EQEs) of light-emitting diodes (LEDs) based on these materials have exceeded 20%. However, comparatively, the blue-emitting CsPbX 3 with high PLQY is still rarely reported. Moreover, the great drop in luminous efficiency during device manufacture makes its EQE lag far behind their counterparts.…”
Section: Introductionmentioning
confidence: 99%
“…While polymers or crosslinked networks are stable at grain boundaries and enable good encapsulation, they usually have a single dimension and simplex passivation site, as well as poor carrier mobility. [19][20][21] Furthermore, functional materials with adhesive, buffering and/or self-healing attributes have also been introduced at grain boundaries or interfaces in order to dissipate energy and resist brittleness. [22][23][24][25][26] However, the breaking elongation of these materials is usually low, and damaged materials cannot be repaired or require extra energy input, such as further thermal annealing, to be repaired.…”
Section: Introductionmentioning
confidence: 99%