Conductive Atomic Force Microscopy Measurements of Localized over Dark Current along Pyramidal Ridge Lines of Intrinsic Hydrogenated Amorphous Silicon Layer on Textured Crystalline
Abstract:Localized over dark current of a hydrogenated amorphous silicon (a-Si:H) layer deposited on p-type crystalline silicon with a pyramidal texture was measured by conductive atomic force microscope. The current followed the ridge lines of the pyramidal a-Si:H texture, and a large over dark current corresponded to a low open circuit voltage (V oc ). The current path has two possible phenomena: variable lm thickness, local crystallization, and a-Si:H degradation. By modifying the textural structure, the current pat… Show more
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