Conduction regime in innovative carbon nanotube via interconnect architectures

Coiffic, J. C.; Fayolle, M.; Maîtrejean, S.; Torres, Luis E. F. Foa; Poche, H. Le

doi:10.1063/1.2826274

Cited by 32 publications

(28 citation statements)

References 13 publications

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“…7 For the application of CNTs, there are several parameters that are crucial, such as tube density, 8 contact area between CNTs and metal electrodes, 9 tube length, number of CNT walls, 3,10 growth conditions of CNTs, 11,12 CNT-metal junction properties, and via hole structure. 13 However, among them, the CNT-metal junction has a profound impact on conduction behavior since the fundamental aspects of CNT-field effect transistor ͑FET͒, including threshold voltage, barrier height, and carrier type, are also influenced by CNT-metal contact. [14][15][16][17][18][19][20] This implies that even in CNT interconnects, the junction property is a critical issue.…”

mentioning

confidence: 99%

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

Lim¹,

Jang²,

Bae³

et al. 2009

Applied Physics Letters

184

108

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The contact resistance of 14 different electrode metals with the work function between 3.9 and 5.7 eV has been investigated for carbon nanotube (CNT) interconnects. We observed that the contact resistance was mainly influenced by the two following parameters: the wettability and the work function difference of electrode metal to CNT. Ti, Cr, and Fe with good wettability showed lower resistance than other metals. Furthermore, no dependence of the contact resistance on the work function difference has been observed. However, the contact resistance of Au, Pd, and Pt with poor wettability increased as the work function difference became larger.

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mentioning

confidence: 99%

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

Lim¹,

Jang²,

Bae³

et al. 2009

Applied Physics Letters

184

108

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“…the electrical properties of multiwalled CNT bundles grown by chemical vapor deposition (CVD) have been intensively investigated for interconnect applications [1][2][3][4]. Lowtemperature growth of CNTs is one of the most fundamental issues to be resolved for development of CNT based on interconnects technology compatible with LSI manufacturing processes.…”

mentioning

confidence: 99%

Towards the low temperature growth of uniform diameter multi walled carbon nanotubes by catalytic chemical vapour deposition technique

Somanathan

Pandurangan

2010

Nano-Micro Lett

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Mesoporous MCM-41 molecular sieves containing f-block transition elements (gadolinium) with various Si/Gd ratios (50, 75 and 100) were synthesised by a hydrothermal method. Their mesoporous structure was confirmed by X-ray diffraction, nitrogen sorption studies, thermogravimetric analysis, scanning and transmission electron microscopy. The local environment of Gd in the material was studied by electron paramagnetic resonance. The compatibility of the catalyst for the synthesis of uniform diameter CNTs by varying the temperature from 400 to 650°C with fixed flow rates of N 2 and C 2 H 2 (140 ml/min and 40 ml/min, respectively). The product is mostly metal containing thin MWCNTs with diameter of 10a20 nm. Characterisation shows that a combination of Gd-MCM-41 (100) catalyst gives a high yield of high quality MWCNTs under optimum growth conditions. [7]. The major drawback of arc discharge and laser evaporation methods is that they are extremely uncontrolled in terms of process parameters, resulting in CNTs that contains significant fractions of unwanted material and that are difficult to manipulate and assemble in specific designs. CVD method is based on the thermal decomposition of hydrocarbon compounds over transition metal catalyst particles.It appears to be a simple and economic technique to synthesize this kind of material at a low temperature, ambient pressure and it represents the best hope for large scale production.To date, all the metal-catalyzed CNT growth studies have mainly focused on transition metals. Curiously, f-block transition elements also referred to as inner transition elements have still not been well explored. One reason could be that inner transition elements are not known to be highly catalytic as the transition elements. It has also been suggested that lanthanoids such as gadolinium and europium exhibit insufficient carbon solubility, slow carbon diffusion, and limited carbide formation to catalyze CNT growth [8]. Recently, gadolinium and europium were used

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“…They use a 4 probes set-up subtracting thus the impact of contact resistances. Secondly, our nanotubes exhibit plenty of defects as Raman spectroscopy has shown in previously [27]. The presence of defects increases the nanotubes' resistance and annihilates the ballistic transport.…”

Section: Room Temperature Measurements On Multiwall Carbon Nanotube Bmentioning

confidence: 92%

“…9-b) [27]. This could represent respectively the signature of Zener tunneling through noncrossing sub-bands at high biases and the monotonic increase of conduction channels with energy [27].…”

Section: Room Temperature Measurements On Multiwall Carbon Nanotube Bmentioning

confidence: 96%

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An application of carbon nanotubes for integrated circuit interconnects

Coiffic¹,

Torres²,

Poche

et al. 2008

Carbon Nanotubes and Associated Devices

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Integrated circuits fabrication is soon reaching strong limitations. Help could come from using carbon nanotubes as conducting wires for interconnects. Although this solution was proposed six years ago, researchers still come up with many obstacles such as localization, low temperature growth on copper, contacting and reproducibility. The integration processes exposed here intend to meet the industrial requirements. Two approaches are then possibly followed. Either using densely packed single wall (SWCNT) (or very tiny multiwall) nanotubes, or filling up the whole interconnect diameter with a single large multiwall (MWCNT) nanotube. In this work, we focus on the integration of multiwall vertical interconnects. Densely packed MWCNTs are grown in via holes by CVD. Alternatively, we have developed a method to obtain a single large nanofibre grown by PECVD (MWCNF) in each via hole. Electrical measurements are performed on CVD and PECVD grown carbon nanotubes. The role of electron-phonon interaction in these devices is also briefly discussed.

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Conduction regime in innovative carbon nanotube via interconnect architectures

Cited by 32 publications

References 13 publications

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

Towards the low temperature growth of uniform diameter multi walled carbon nanotubes by catalytic chemical vapour deposition technique

An application of carbon nanotubes for integrated circuit interconnects

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