Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

Abstract

Unipolar resistance switching characteristics are observed in fully transparent indium-doped SnO2/MgO/F-doped SnO2 device. In addition to the transmittance above 90% for visible light, the devices show good endurance and retention characteristics. The resistance-temperature relation curves and the corresponding Arrhenius plot confirm the semiconducting conduction behavior of both the high resistance state and the low resistance state. Experimental results indicate that Ohmic and trap controlled space-charge-limited conduction mechanism controlled the charge carriers transport at the low voltage and high voltage regions, respectively. This work presents a candidate material MgO for the application on the future see-through electronic devices.

Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO2 Resistive Switching Materials

“…Figure 6c,d reveals the Ohmic conduction with slope (α) of %1 in HfO 2 and MgO metal-oxide-metal stacks in both LRS and HRS. [12,29] In this study, the MgO thin film exhibits perfect physical properties, such as a wide bandgap of 4.2 eV, high transmittance (86-88%) in the visible range, and presence of non-lattice oxygen, which matches with well-documented oxide-switching material HfO 2 . Here, the wide bandgap of 5.6 eV and high transmittance of 84-98% were estimated for HfO 2 thin film.…”

“…Figure 6c,d reveals the Ohmic conduction with slope (α) of ≈1 in HfO 2 and MgO metal–oxide–metal stacks in both LRS and HRS. [ 12,29 ]…”

“…[ 2 ] These features make MgO thin films appropriate in many applications such as insulating coatings, [ 2 ] buffer layers for high‐transition temperatures oxide superconductors, barriers in Josephson tunnel junctions, optical films, and plasma display devices. [ 2,11,12 ]…”

Site dependency of the magnetism for Mn adsorption on MgO/Ag(001): a combined DFT$+U$ and STM investigation

“…Future work will include the effects of inter-Mn exchange coupling. These systems have many important applications, including possible magnetic memory 38 as well as energy storage devices. 39 Methods To model a system of an adatom on a surface using DFT, we must first transform the whole Mn/MgO/Ag into a periodic system.…”

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

“…As a result, the device is switched to the HRS [22]. Consequently, in WO x thin film, there are still thermo-chemically unstable components such as oxygen ions, and tungsten ions, which may cause the localized resistance variation [14,23]. In particular, the random migration of oxygen ions (O 2− ) results in unstable RS and poor retention characteristics in the Ti/WO x /Pt device.…”