1992
DOI: 10.1016/0022-0248(92)90778-h
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Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering

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Cited by 172 publications
(92 citation statements)
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“…The BZO films were prepared with a thickness of 500 nm by PLD (solid), and both the AZO and GZO thin films were prepared with a thickness of 500 nm by PLD (solid) and 2000 nm by rf+dc-MSD (open), as shown in Tables 2 and 1, respectively. Two theoretical μ-n curves calculated using the ionized impurity scattering theory reported by Brooks-Herring-Dingle (B-H-D) (dashed line) and the B-H-D theory with nonparabolicity of the conduction band taken into account (solid line) [43][44][45] are also indicated in Fig. 5.…”
Section: Influence Of Doped Impurity and Deposition Methods On Electrimentioning
confidence: 99%
“…The BZO films were prepared with a thickness of 500 nm by PLD (solid), and both the AZO and GZO thin films were prepared with a thickness of 500 nm by PLD (solid) and 2000 nm by rf+dc-MSD (open), as shown in Tables 2 and 1, respectively. Two theoretical μ-n curves calculated using the ionized impurity scattering theory reported by Brooks-Herring-Dingle (B-H-D) (dashed line) and the B-H-D theory with nonparabolicity of the conduction band taken into account (solid line) [43][44][45] are also indicated in Fig. 5.…”
Section: Influence Of Doped Impurity and Deposition Methods On Electrimentioning
confidence: 99%
“…In the case of electron concentration higher than 10 20 cm À3 , the dominant scattering is often inferred to be ingrain scattering. 42,43 In order to at least partially disentangle the effects of ingrain and GB scattering on electron transport in TCOs, a frequent approach consists in measuring the electron mobility in two different ways. 2,25,32,44,45 The Hall measurements describe the mobility of electrons (l Hall ), which are moving across many grains and grain boundaries in the conduction path.…”
Section: Generalitiesmentioning
confidence: 99%
“…Also Minami et al used these two scattering processes to describe his comprehensive µ(N) data for magnetron-sputtered ZnO and ZnO:Al films [6], which were referenced already in our earlier review papers [7,8]. Minami et al also did not include the lattice mobility of ZnO, which is about 200 Vs/cm 2 (see our review [7] and [8] Recent reviews of the electrical parameters (carrier concentration and Hall mobility) of TCO films show a significant scattering of the experimental data [7,9], which point to the probable influence of other scattering processes not yet taken into consideration.…”
Section: Introductionmentioning
confidence: 99%