2014
DOI: 10.1063/1.4898073
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Conduction in alumina with atomic scale copper filaments

Abstract: The conductance of atomic scale filaments with three and seven Cu atoms in a-alumina are calculated using ab initio density functional theory. We find that the filament with 3 Cu atoms is sufficient to increase the conductance of 1.3 nm thick alumina film by more than 10 3 times in linear response. As the applied voltage increases, the current quickly saturates and differential resistance becomes negative. Compared to the filament with three Cu atoms, while the conductance of the filament with seven Cu atoms i… Show more

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Cited by 7 publications
(11 citation statements)
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References 41 publications
(33 reference statements)
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“…One point should be mentioned that no crystalline Ag was found in the space between the clusters, suggesting the Ag actually be merged with the SiO 2 lattice, consistent with the result in this work. According to the formation energy of a Cu atom in the HfO 2 lattice, the Cu atom is more likely to occupy the interstitial sites of the HfO 2 matrix, rather than the substitutional sites 35 36 . The growth of filament relies on the transportation of Cu element to the next adjacent interstitial site.…”
Section: Resultsmentioning
confidence: 99%
“…One point should be mentioned that no crystalline Ag was found in the space between the clusters, suggesting the Ag actually be merged with the SiO 2 lattice, consistent with the result in this work. According to the formation energy of a Cu atom in the HfO 2 lattice, the Cu atom is more likely to occupy the interstitial sites of the HfO 2 matrix, rather than the substitutional sites 35 36 . The growth of filament relies on the transportation of Cu element to the next adjacent interstitial site.…”
Section: Resultsmentioning
confidence: 99%
“…The details of the mechanism of CBRAMs have been described elsewhere [4,5]. The performance of CBRAM devices has been studied with several materials as the solid electrolyte which include chalcogenides [6,7], insulating metal oxides [8][9][10][11][12][13][14] and bilayer materials [15,16]. CBRAM devices have demonstrated excellent performance in terms of operational voltage, read/write speed, endurance and data retention.…”
Section: Introductionmentioning
confidence: 99%
“…Atoms are less self-repulsing than electrons 8 and as the mass of an atom is much larger than the mass of an electron, the conducting filaments are more stable. 9 However, their commercial uptake depends on a more detailed understanding of the defect processes, switching mechanisms and filament formation in these new systems.…”
Section: Introductionmentioning
confidence: 99%