Conduction-band crossover induced by misfit strain in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">In</mml:mi><mml:mi mathvariant="normal">Sb</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">Sb</mml:mi></mml:mrow></mml:math>self-assembled quantum dots

Rybchenko, S. I.; Gupta, R.; Lai, K. T.; Itskevich, I. E.; Haywood, S. K.; Tasco, V.; Deguffroy, N.; Баранов, А. Н.; Tournié, E.

doi:10.1103/physrevb.76.193309

Cited by 9 publications

(4 citation statements)

References 11 publications

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“…The threading defect density thus needs to be mitigated through optimization of the buffer layer growth and structure, as demonstrated in the near-IR 63 , to improve the DL performance. Quantum dots however are not a straightforward option since the InSb/GaSb material system intrinsically gives rise to low-radiative efficiency QDs 115 , 116 . Laser designs based on the ICL concept could possibly be applied to other materials systems exhibiting comparable band-structure configurations, opening the way to shorter wavelength applications 38 .…”

Section: Discussionmentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

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Section: Discussionmentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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“…This increases the direct band gap in type-I InSb dots beyond the 3 -5 m range as has been shown in previous band-structure modeling. [1][2][3] Hence, for use in MIR devices, alternative SAQD designs need to be considered.…”

Section: Introductionmentioning

confidence: 99%

Type-IIInAsxSb1−x/InAsquantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

et al. 2009

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InSb-based self-assembled quantum dots are very promising for the midinfrared ͑3-5 m͒ optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAs x Sb 1−x / InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.

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“…Using the optimization procedure, we adjust the size of the QD to the luminescence wavelength

λ_{3} = \frac{2 π c}{ω_{3}} = 5.24 μ m

with

μ_{12} = 3.63 \times 10^{- 28} C \cdot m

for

1 S (e) \to 1 S (h)

transition (see Figure 2). We obtain

a = 20 nm

for the InSb QD with the material parameters

m_{e} = 0.013 m_{0}

m_{h} = 0.42 m_{0}

ε_{c} = 16.8

(

ε_{s} = ε_{d} = 1.753

E_{g} = 0.17 eV

{normalΔ}_{s} = 0.43 eV

, [ 31–33 ] and

χ_{3, 0} = 9.42

χ_{1, 0} = π

χ_{2, 1} = 7.72

for the selected transitions. A possible excitation of QDs can be realized by laser pumping at a telecom wavelength of

λ_{p} = \frac{2 π c}{ω_{p}} = 1.52 μ m

with

μ_{14} = 1.85 \times 10^{- 28} C \cdot m

for

1 S (h) \to 3 S (e)

transition.…”

Section: The Control Of Qd Luminescence In the Ir Rangementioning

confidence: 98%

Hybrid Schemes for Excitation of Collective Resonances with Surface Plasmon Polaritons in Arrays of Quantum Dots in the Proximity of Graphene

Gubin

Shesterikov

Prokhorov

et al. 2020

Laser & Photonics Reviews

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Collective near‐field effects in perspective 2D materials containing semiconductor quantum emitters can be used to design novel devices for light manipulation on the nanoscale. The present paper considers an energy conversion from the pump laser field to the surface plasmon polaritons (SPPs) on the base of the hybrid optoplasmonic multi‐level scheme of near‐resonant interaction with semiconductor quantum dots (QDs) placed in the proximity of a graphene surface. Using numerical simulations and semiclassical approach for the light–matter interaction, it is shown that maximum efficiency of SPP generation is achieved in strong coupling conditions for a stationary regime of SPP‐QD interaction. Besides, the conditions for observation of SPP collective resonances in an ordered array of optically excited QDs placed above graphene are determined. Finally, the use of the constructive SPP interference regime in a meta‐layer of QDs above graphene for efficient near‐field amplification and subwavelength light concentration is proposed and discussed.

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Conduction-band crossover induced by misfit strain inInSb∕GaSbself-assembled quantum dots

Cited by 9 publications

References 11 publications

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Type-IIInAsxSb1−x/InAsquantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

Hybrid Schemes for Excitation of Collective Resonances with Surface Plasmon Polaritons in Arrays of Quantum Dots in the Proximity of Graphene

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