Conductance quantization and the 0.7×2e2∕h conductance anomaly in one-dimensional hole systems

Danneau, R.; Clarke, W.A.; Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Simmons, M. Y.; Pepper, M.; Ritchie, D. A.

doi:10.1063/1.2161814

Cited by 45 publications

(54 citation statements)

References 22 publications

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“…Although most experiments are performed with electrons in GaAs wires, [1][2][3][4][5][6][7][8][9][10][11] a similar "0.7 structure" was recently observed in devices formed in two-dimensional hole systems. [12][13][14] It is widely accepted that the origin of the quasiplateau lies in correlation effects, but a complete understanding of this phenomenon remains elusive.…”

Section: Introductionmentioning

confidence: 99%

Spin coupling in zigzag Wigner crystals

et al. 2007

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We consider interacting electrons in a quantum wire in the case of a shallow confining potential and low electron density. In a certain range of densities, the electrons form a two-row ͑zigzag͒ Wigner crystal whose spin properties are determined by nearest and next-nearest neighbor exchange as well as by three-and fourparticle ring exchange processes. The phase diagram of the resulting zigzag spin chain has regions of complete spin polarization and partial spin polarization in addition to a number of unpolarized phases, including antiferromagnetism and dimer order as well as a novel phase generated by the four-particle ring exchange.

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Section: Introductionmentioning

confidence: 99%

Spin coupling in zigzag Wigner crystals

et al. 2007

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“…Such a situation can, in principle, be easily realized by tuning the lateral confinement via side gates in self-assembled 64,65 or lithographically defined nanowires, 66 or quantum point contacts. [67][68][69] Quasi-onedimensional (1D) hole systems thus provide an interesting laboratory for the study of spin-3/2 physics, as well as have the potential for being building blocks in hole-spintronics applications.…”

Section: Introductionmentioning

confidence: 99%

Spin-32physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

et al. 2009

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We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between different subbands. We elucidate the interplay between quantum confinement and heavy-holelight-hole mixing and identify a certain robustness displayed by low-lying hole-wire subband edges with respect to changes in the shape or strength of the wire potential. The ability to address individual subband edges in, e.g., transport or optical experiments enables the study of holes states with nonstandard spin polarization, which do not exist in spin-1/2 systems. Changing the aspect ratio of hole wires with rectangular cross-section turns out to strongly affect the g factor of subband edges, providing an opportunity for versatile in-situ tuning of hole-spin properties with possible application in spintronics. The relative importance of cubic crystal symmetry is discussed, as well as the spin splitting away from zone-center subband edges.

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“…1(b), we obtain µ F E ≈ 0.3 cm 2 /Vs. The field-effect mobility is low compared to, e.g., InAs nanowire transistors, but this is not unexpected given the much higher effective mass m * ∼ 0.35m 0 for 1D-confined holes in GaAs [33] (c.f., m * ∼ 0.023m 0 for electrons in InAs nanowires [34]), and the fact that conduction occurs largely via a thin, heavily-doped shell in our devices.…”

Section: Resultsmentioning

confidence: 99%

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Ullah

Carrad

Krogstrup

et al. 2018

Phys. Rev. Materials

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Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

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Conductance quantization and the 0.7×2e2∕h conductance anomaly in one-dimensional hole systems

Cited by 45 publications

References 22 publications

Spin coupling in zigzag Wigner crystals

Spin coupling in zigzag Wigner crystals

Spin-32physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

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