Condition Monitoring in a Power Module Using On-State Resistance and Case Temperature

Lai, Wu‐Wei; Zhao, Yuanpei; Chen, Minyou; Wang, Yueyue; Ding, Xueni; Xu, Shengyou; Pan, Liang‐ming

doi:10.1109/access.2018.2879314

Cited by 14 publications

(7 citation statements)

References 23 publications

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“…Specifically, the presence of voids causes the thermal gradient to The thermal resistance (R th ) of an IGBT quantifies the device's ability to conduct heat away from its active area to either the backside case or a heat sink. By dividing the temperature difference between the junction and the case by the power dissipated, the thermal resistance can be obtained in the following manner [32]:…”

Section: Effect Of Voids On the Thermal Resistance And Gradient Of Th...mentioning

confidence: 99%

Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach

Alavi,

De Ceuninck,

Daenen

2024

Electronics

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This study investigates the thermal behavior of Insulated Gate Bipolar Transistors (IGBTs) with a focus on the influence of solder voids within the device. Utilizing a combination of Finite Element Method (FEM) simulations, X-ray imaging, and SEM-EDX analysis, we accurately modeled the internal structure of IGBTs to assess the impact of void characteristics on thermal resistance. The findings reveal that the presence and characteristics of solder voids—particularly their size, number, and distribution—significantly affect the thermal resistance of IGBT devices. Experimental measurements validate the FEM model’s accuracy, confirming that voids disrupt the heat flow path, which can lead to increased thermal resistance and potential device failure. Five regression models, including Gaussian process regression (GPR) and neural networks, were employed to predict the thermal resistance based on void characteristics, with the GPR models demonstrating superior performance. The optimal GPR RQ model consistently provided accurate predictions with an RMSE of 0.0050 and R2 of 0.9728. Using the void percentage as the only input parameter for the regression models significantly impacted the prediction accuracy, showing the importance of the void extraction method. This study shows the necessity of minimizing solder voids and offers a robust methodological framework for a better prediction of the reliability of IGBTs.

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Section: Effect Of Voids On the Thermal Resistance And Gradient Of Th...mentioning

confidence: 99%

Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach

Alavi,

De Ceuninck,

Daenen

2024

Electronics

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“…The thermal coupling platform is illustrated in Figure 9. This experimental platform includes: one 30 V DC power supply for the MOSFET gate driving, a controlled DC current supply for the testing circuit (5 A), two power components (MOSFET: IRF540NPBF, Infineon, Munich, Bavaria, Germany, and diode: MBR20100CT, ON Semiconductor, Phoenix, Arizona, USA) packaged with TO-220, a digital multimeter which is used for observing the voltage-drop of the diode, a current sensor which is used to measure the current levels, a data Taker Data Logger (DT80 with eight bi-directional channels, Thermo Fisher Scientific, Waltham, MA, USA) which is employed for collecting the measurement data, K-type thermocouples attached to the case of the devices for Tc testing [24,25], and real-time data monitoring by a computer and a FR4 PCB board. In power converter applications when the MOSFET and the diode are working, power losses (the conduction loss and switching loss, etc.)…”

Section: The Experimental Platformmentioning

confidence: 99%

“…where R DS is the on-state resistance for the MOSFET [24]. The value is 44 mΩ for the MOSFET (IRF540N) at ambient temperature (T a ) and the relationship between R DS and T j is given in the datasheet [30].…”

Section: Losses Calculation and T C Comparisonsmentioning

confidence: 99%

Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling

Wei

Tian

et al. 2019

Applied Sciences

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In relation to power converter design, power density is increasing while the form factor isdecreasing. This trend generally reduces the rate of the cooling process, which increases the mutualthermal coupling among the surrounding power components. Most of the traditional modelsusually ignore the mutual effects or just focus on the conduction coupling. To deal with these factors,the thermal modeling for a boost converter system has been built to compare the junctiontemperatures (Tj) and the increments under different working conditions in order to consider theconduction coupling. A multi-variable thermal resistances model is proposed in this paper toincorporate the convection thermal coupling into the mutual thermal effects. The couplingresistances, MOSFET to the diode[...]

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“…Noted that, the aging does affect the thermal resistance R th of a MOSFET, and R th can be used as the failure precursor too. However, as compared to the R th , the advantages of using R ds,on as healthy indicator are due to its higher sensitivity and ease of accessibility [16]. Hence, the aging of R ds,on should be considered.…”

Section: Introductionmentioning

confidence: 99%

A MOSFET SPICE Model With Integrated Electro-Thermal Averaged Modeling, Aging, and Lifetime Estimation

Tian

Siwakoti

2021

IEEE Access

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Condition Monitoring in a Power Module Using On-State Resistance and Case Temperature

Cited by 14 publications

References 23 publications

Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach

Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach

Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling

A MOSFET SPICE Model With Integrated Electro-Thermal Averaged Modeling, Aging, and Lifetime Estimation

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