Conception of Stretchable Resistive Memory Devices Based on Nanostructure‐Controlled Carbohydrate‐block‐Polyisoprene Block Copolymers

Abstract

It is discovered that the memory‐type behaviors of novel carbohydrate‐block‐polyisoprene (MH‐b‐PI) block copolymers‐based devices, including write‐once‐read‐many‐times, Flash, and dynamic‐random‐access‐memory, can be easily controlled by the self‐assembly nanostructures (vertical cylinder, horizontal cylinder, and order‐packed sphere), in which the MH and PI blocks, respectively, provide the charge‐trapping and stretchable function. With increasing the flexible PI block length, the stretchability of the designed copolymers can be significantly improved up to 100% without forming cracks. Thus, intrinsically stretchable resistive memory devices (polydimethylsiloxane(PDMS)/carbon nanotubes(CNTs)/MH‐b‐PI thin film/Al) using the MH‐b‐PI thin film as an active layer is successfully fabricated and that using the MH‐b‐PI12.6k under 100% strain exhibits an excellent ON/OFF current ratio of over 106 (reading at −1 V) with stable V set around −2 V. Furthermore, the endurance characteristics can be maintained over 500 cycles upon 40% strain. This work establishes and represents a novel avenue for the design of green carbohydrate‐derived and stretchable memory materials.

Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator

“…Therefore, although the electrode resistance varies between ± 3.5% during deformation, it will not influence the HRS and LRS resistances of the memory device significantly. [19,48] Finally, we try to elucidate the switching mechanism of the Ag/MIL-53/GaInSn@PDMS device through probing the local electrical behavior with conductive atomic force microscope (C-AFM) and the formation of conductive filaments with X-ray photoelectron spectroscopic (XPS) analyses. At the stretching strain of 13%, the MIL-53 nanofilm cracks and exfoliates from the GaInSn@PDMS soft electrode as shown in Figure S9a (Supporting Information).…”

“…[15,16] Using parylene-C, etc., as the switching media, complementary metal oxide semiconductor (CMOS)compatible memories are also made possible by Huang et al with organic materials. [18][19][20][21] Fabrication of stretchable resistive switching memories that juggles both the electrical and the mechanical stability is still a technical challenge at the moment. [18][19][20][21] Fabrication of stretchable resistive switching memories that juggles both the electrical and the mechanical stability is still a technical challenge at the moment.…”

Organic–Inorganic Nanocomposite Film for High‐Performance Stretchable Resistive Memory Device

“…[33] The switching voltage threshold and the deviation of all annealing-based devices can be improved because of the ordered nanostructure of P4VP 15k -b-PPMA 46k , as shown in Figure 1b. [33] The switching voltage threshold and the deviation of all annealing-based devices can be improved because of the ordered nanostructure of P4VP 15k -b-PPMA 46k , as shown in Figure 1b.…”

Flexible and Fatigue‐Resistant Ternary Electrical Memory Based on Alternative Copolysiloxane with Carbazole Donors and Imidazole‐Modified Naphthalimide Acceptors

“…Long‐term and high thermal stability conjugated polymers for multilevel memory have also been synthesized . As for the application of polymers in flexible memory devices, Chen and coworkers reported stretchable resistive binary memory devices based on nanostructure‐controlled carbohydrate‐ block ‐polyisoprene copolymers. Huang and coworkers fabricated a transient and flexible memristor, in which Ag nanowire–polyvinylpyrrolidone (PVP) and citric acid quantum dot–PVP composite films are used as bottom electrodes and active memory layer, respectively.…”