Concept of impurity-dislocation magnetism in III–V compound semiconductors

Саныгин, В. П.; Tishchenko, E. A.; Shi, Dau Hieu; Изотов, А. Д.

doi:10.1134/s0020168513010147

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Cited by 8 publications

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“…Experimental data were analyzed and generalized to the concept of impurity-dislocation magnetism in transition metal doped III-V materials, aimed at pro ducing fundamentally new spintronic materials [6]. A natural question in this context is what contribution is made by the semiconductor host itself to the dislocation magnetism?…”

Section: Introductionmentioning

confidence: 99%