Abstract:A computer program has been developed which follows the trajectories of fast ions in crystals, based on the assumption of classical dynamics and binary collisions. Initial work has been directed at various aspects of proton channeling in copper in the energy range 5-509 keV. The critical angle and distance of closest approach in a perfect lattice have been evaluated for both rows and planes and compare well with the predictions of the continuum mods1 as developed by Lindhard (1965). We also discuss the overlap… Show more
“…Therefore the experimental results were analyzed with Monte Carlo computer simulations [ 42,48]. In these calculations the trajectories of a fixed number of charged particles on their way through the YBa2Cu3Ü7 lattice are calculated applying a binary-collision model.…”
The growth quality ofYBaCuO thin films deposited by sputtering on different substrates (AlzOs, MgO, SrTiOs, Zr(Y)Oz) has been studied by X-ray diffraction and channeling experiments as a function ofthe deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films ofup to 5.5 x 106 AJcm2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing threedimensional superconducting behaviour. Films on (100) SrTiOs of9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Baz Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16m V and ±30m V.Epitaktisches Wachsturn und Eigenschaften dünner Schichten des Hochtemperatur-Supraleiters YBaCuO ZUSAMMENFASSUNG Das Verfahren der Magnetron-Kathodenzerstäubung wurde zur Abscheidung dünner YBaCuO-Schichten auf verschiedenen Substraten (AlzOs, MgO, SrTiOs, Zr(Y)Oz) optimiert. Die Wachstumsrichtung und die kristalline Güte der Schichten wurde in Abhängigkeit von der Substrat-Oberflächengüte, der Orientierung und der Temperatur mittels Ionenchanneling und Röntgendiffraktion untersucht. Der Grad der Epitaxie und die Mosaik-Verbreiterung bestimmen den kritischen Transportstrom mit Werten bis zu 5.5 ·106 Ä/cm2 bei 77 K. Selbst in ultradünnen Schichten mit einer minimalen Dicke von bis zu 2 nm zeigt das supraleitende Verhalten 3-dimensionalen Charakter. Schichten auf (100) SrTiOs mit Dicken kleiner etwa 9 nm sind teilweise zur Unterlage verspannt, was auf kommensurables Wachstum hinweist. Die Channeling-Analyse der Schichtoberfläche ergibt in günstigen Fällen eine Verlagerung von nur 1 Ba-Atom pro Baz YKette, was einer maximalen Dicke der gestörten Oberfläche von etwa 0.6 nm entspricht. Auf diesen Schichten präparierte Tunneldioden zeigen Strukturen mit einer Energielücke inderNähe von ±16m V und ±30m V.--I --
“…Therefore the experimental results were analyzed with Monte Carlo computer simulations [ 42,48]. In these calculations the trajectories of a fixed number of charged particles on their way through the YBa2Cu3Ü7 lattice are calculated applying a binary-collision model.…”
The growth quality ofYBaCuO thin films deposited by sputtering on different substrates (AlzOs, MgO, SrTiOs, Zr(Y)Oz) has been studied by X-ray diffraction and channeling experiments as a function ofthe deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films ofup to 5.5 x 106 AJcm2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing threedimensional superconducting behaviour. Films on (100) SrTiOs of9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Baz Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16m V and ±30m V.Epitaktisches Wachsturn und Eigenschaften dünner Schichten des Hochtemperatur-Supraleiters YBaCuO ZUSAMMENFASSUNG Das Verfahren der Magnetron-Kathodenzerstäubung wurde zur Abscheidung dünner YBaCuO-Schichten auf verschiedenen Substraten (AlzOs, MgO, SrTiOs, Zr(Y)Oz) optimiert. Die Wachstumsrichtung und die kristalline Güte der Schichten wurde in Abhängigkeit von der Substrat-Oberflächengüte, der Orientierung und der Temperatur mittels Ionenchanneling und Röntgendiffraktion untersucht. Der Grad der Epitaxie und die Mosaik-Verbreiterung bestimmen den kritischen Transportstrom mit Werten bis zu 5.5 ·106 Ä/cm2 bei 77 K. Selbst in ultradünnen Schichten mit einer minimalen Dicke von bis zu 2 nm zeigt das supraleitende Verhalten 3-dimensionalen Charakter. Schichten auf (100) SrTiOs mit Dicken kleiner etwa 9 nm sind teilweise zur Unterlage verspannt, was auf kommensurables Wachstum hinweist. Die Channeling-Analyse der Schichtoberfläche ergibt in günstigen Fällen eine Verlagerung von nur 1 Ba-Atom pro Baz YKette, was einer maximalen Dicke der gestörten Oberfläche von etwa 0.6 nm entspricht. Auf diesen Schichten präparierte Tunneldioden zeigen Strukturen mit einer Energielücke inderNähe von ±16m V und ±30m V.--I --
“…In reality, in a dark matter direct detection experiment, the distribution of recoil directions is expected to be peaked in the direction of the average WIMP flow. At room temperature and pressure Our calculation is based on the classical analytic models developed in the 1960's and 70's, in particular by Lindhard and collaborators [6,[14][15][16][17][18][19][20][21]. In these models the discrete series of binary collisions of the propagating ion with atoms is replaced by interactions between the ion and uniformly charged strings or planes.…”
Section: Introductionmentioning
confidence: 99%
“…Morgan and Van Vliet [16,17]. In Molière's approximation [22] the axial continuum potential, as a function of the transverse distance r to the string, is…”
Section: Introductionmentioning
confidence: 99%
“…Thus the moving ion does not encounter atoms at a fixed separation or at fixed impact parameter as is the case for a row. To find the static critical distance x c of a planar channel we follow the procedure of defining a "fictitious string", introduced by Morgan and Van Vliet [16,21]. They reduced the problem of scattering from a plane of atoms to the scattering from an equivalent fictitious row contained in a strip of width 2R centered on the projection of the ion path onto the plane of atoms.…”
The channeling of the ion recoiling after a collision with a WIMP changes the ionization signal in direct detection experiments, producing a larger scintillation or ionization signal than otherwise expected. We give estimates of the fraction of channeled recoiling ions in solid Xe, Ar and Ne crystals using analytic models produced since the 1960's and 70's to describe channeling and blocking effects.
“…Thereby, theirs became the first channeling simulation program; since that time, many others have been written [2][3][4][5][6][7][8][9]. This paper will offer a brief review and explanation of the methodology involved in the simulation of channeling of H and heavier ions having energies of 50 keV/amu or above; no attempt will be made to cover the related fields of channeling calculations using semianalytic methods or continuum potentials or of the simulation of lower energy ion scattering phenomena or collision cascades.…”
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