Computer simulation of high frequency modulation of laser diode radiation

Šermukšnis, E.; Vyšniauskas, Juozas; Vasiliauskas, Tomas; Palenskis, Vilius

doi:10.3952/lithjphys.44601

Cited by 4 publications

(8 citation statements)

References 5 publications

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“…On the grounds of these simulation results the parameter estimation technique was suggested. The rate equations used for computer simulation were improved (comparing with earlier simulation [1]) by including the nonlinear amplification factor ε, the optical confinement factor Γ, and changing the carrier lifetime τ s by the way of (3), which describes nonradiative recombination, radiative interband recombination, and Auger recombination. Transient processes were simulated for large number of similar DFB lasers.…”

Section: Discussionmentioning

confidence: 99%

“…At first, a simplified physical model based on rate equations for carrier and photon densities was used for computer simulation [1]. However, though some of physical factors were not included in this model, the accuracy of modelling results for some DFB lasers was sufficiently good.…”

Section: Theoretical Modelsmentioning

confidence: 99%

“…Optical amplification coefficient α [cm 3 /s] was assumed to be equal to the product of the optical differential amplification g [cm 2 ] and the group velocity v g (α = v g g) in the earlier model of simplified rate equations [1]. Also, the optical amplification depends on photon density: where N is the density of electrons, P is the density of photons, N 0 is the density of electrons needed for reaching Fermi quasi level, and ε is the nonlinear amplification factor.…”

Section: Theoretical Modelsmentioning

confidence: 99%

“…In the third model, the term N/τ s in the rate equation [1] is changed to N γ e (N ), because γ e = 1/τ s , where γ e (N ) is the rate of electron recombination [2]:…”

Section: Theoretical Modelsmentioning

confidence: 99%

“…Thus, simulation of transient processes in DFB semiconductor lasers plays very important role. Transient processes usually are described by equations of electron and photon density changes (by rate equations) [1,2].…”

Section: Introductionmentioning

confidence: 99%

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Computer simulation of transient processes in DFB semiconductor lasers

Vasiliauskas¹

2007

Lithuanian J. Phys.

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Transient processes of semiconductor laser were simulated. These processes are best described by the variations of injected electron density and emitted photon density. Rate equations were chosen to describe the transient processes. Using the described model of transient processes, the unknown parameters of DFB (distributed feedback) semiconductor laser were defined from the experimental characteristics: the coefficient of optical amplification α, the factor of spontaneous emission β, the electron and photon lifetime, and the form of injection current pulse. The parameter estimation technique, which allows to define laser parameter values simply, quickly, and fairly precisely, was suggested.Transient processes were simulated for several DFB lasers and the coincidence of calculation results with experimental ones for all lasers was sufficient. The usable physical model was improved. Transient processes of lasers were simulated again and more precise results were obtained. The mismatch of analysed laser parameters with experimental ones did not exceed the limit of 10%.

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Section: Discussionmentioning

confidence: 99%

Section: Theoretical Modelsmentioning

confidence: 99%

Section: Theoretical Modelsmentioning

confidence: 99%

“…In the third model, the term N/τ s in the rate equation [1] is changed to N γ e (N ), because γ e = 1/τ s , where γ e (N ) is the rate of electron recombination [2]:…”

Section: Theoretical Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Computer simulation of transient processes in DFB semiconductor lasers

Vasiliauskas¹

2007

Lithuanian J. Phys.

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Investigation of dynamic characteristics of InGaAsP/InP laser diodes

Šermukšnis¹

2006

Lithuanian J. Phys.

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We present the investigation results of dynamic characteristics for InGaAsP quantum-well lasers, where we look for the problems that have an influence on laser diode modulation speed, quality, and reliability. The experiments have shown that the investigated distributed feedback laser diodes have shorter turn-on delay time (from 0.6 ns to 1.2 ns) than Fabry-Perot lasers (from 0.8 ns to 1.4 ns). Different design samples have been investigated and it is found that the turn-on delay time increases with laser cavity length due to the active region volume increase. It is also shown that for the investigated structures the main carrier recombination mechanism is the non-radiative recombination through defects. The same defects have the main influence to the laser operation characteristic degradation during ageing.

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Hot-electron fluctuations and transistor performance: hot-phonon effects

Matulionis¹,

Morkoç̌²

2014

Lith. J. Phys.

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The frequency performance of a GaN heterostructure field-effect transistor is discussed in terms of plasmon-assisted dissipation of LO-mode heat accumulated by non-equilibrium longitudinal optical phonons (hot phonons). Hot phonons cause additional scattering of electrons and also facilitate defect formation. Plasmon-LO-phonon resonance is experimentally resolved in a wide range of experiments such as fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor reliability, and transistor phase noise.

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Computer simulation of high frequency modulation of laser diode radiation

Cited by 4 publications

References 5 publications

Computer simulation of transient processes in DFB semiconductor lasers

Computer simulation of transient processes in DFB semiconductor lasers

Investigation of dynamic characteristics of InGaAsP/InP laser diodes

Hot-electron fluctuations and transistor performance: hot-phonon effects

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