Investigation of dynamic characteristics of InGaAsP/InP laser diodes

Abstract

We present the investigation results of dynamic characteristics for InGaAsP quantum-well lasers, where we look for the problems that have an influence on laser diode modulation speed, quality, and reliability. The experiments have shown that the investigated distributed feedback laser diodes have shorter turn-on delay time (from 0.6 ns to 1.2 ns) than Fabry-Perot lasers (from 0.8 ns to 1.4 ns). Different design samples have been investigated and it is found that the turn-on delay time increases with laser cavity length due to the active region volume increase. It is also shown that for the investigated structures the main carrier recombination mechanism is the non-radiative recombination through defects. The same defects have the main influence to the laser operation characteristic degradation during ageing.