Computer simulation of blistering in multilayer mirrors for EUV lithography

Bondareva, A. L.; Zmievskaya, G. I.

doi:10.1134/s1027451010030201

Cited by 13 publications

(8 citation statements)

References 3 publications

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“…An effect in EUVL that does seem to be driven by EUV-induced plasmas is blister formation on multilayer mirrors caused by delamination of the upper layers [77,78]. This delamination has been attributed to bombardment of the MLM with high energy hydrogen ions.…”

Section: Observation Of Cleaning and Degradation Of Exposed Surfacesmentioning

confidence: 99%

“…Multilayer delamination has been shown, even under low ion flux conditions, if the exposure time and thus the total ion fluence was sufficient [99]. Some of these studies [77,[94][95][96]99] relate their work to mirror degradation in EUV lithography by suggesting that the used ion sources serve as a proxy for the ion fluxes that are created by an EUV-induced plasma. This approach is valid for the first few microseconds after the EUV pulse, in a collisionless regime and while using biased surfaces [82].…”

Section: Multilayer Delaminationmentioning

confidence: 99%

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EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

et al. 2019

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After a long period of relatively low interest, science related to effects in the Extreme Ultraviolet (EUV) spectrum range experienced an explosive boom of publications in the last decades. A new application of EUV in lithography was the reason for such a growth. Naturally, an intensive development in such area produces a snowball effect of relatively uncharted phenomena. EUV-induced plasma is one of those. While being produced in the volume of a rarefied gas, it has a direct impact onto optical surfaces and construction materials of lithography machines, and thus has not only scientific peculiarity, but it is also of major interest for the technological application. The current article provides an overview of the existing knowledge regarding EUV-induced plasma characteristics. It describes common, as well as distinguishing, features of it in comparison with other plasmas and discusses its interaction with solid materials. This article will also identify the gaps in the existing knowledge and it will propose ways to bridge them.

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Section: Observation Of Cleaning and Degradation Of Exposed Surfacesmentioning

confidence: 99%

Section: Multilayer Delaminationmentioning

confidence: 99%

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

et al. 2019

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“…The processes that influence the reflectivity are actively investigated in multiple studies. 5,[7][8][9][10][11][12][13][14][15] The interaction between EUV induced plasma and adjacent surfaces can have beneficial effects such as the removal of contamination by EUV-reactive ion sputtering. 5 Negative effects include the degradation of multilayer coatings due to delamination leading to the formation of blisters.…”

Section: Introductionmentioning

confidence: 99%

“…5 Negative effects include the degradation of multilayer coatings due to delamination leading to the formation of blisters. 10,16 This phenomenon has been attributed to impact by high energy hydrogen ions formed in the plasma and accelerated by plasma-induced electric fields. Blister formation in Mo/Si multilayer samples due to ion irradiation has been confirmed experimentally using moderate energy (50-200 eV) 15 and energetic (>800 eV) hydrogen ions.…”

Section: Introductionmentioning

confidence: 99%

“…13,17 Even deuterium ions with energies as low as 5 eV have been shown to be capable of having a negative influence on EUV lithography relevant optical materials. 11 Some of these studies 10,11,13,15 relate their work to mirror degradation in EUV lithography by suggesting that the used ion sources serve as a proxy for the ion fluxes created by an EUV induced plasma. The applicability of the used ion sources, in terms of ionic species composition and ion energy distribution function (IEDF), is unclear because these properties have not yet been determined in EUV induced plasma.…”

Section: Introductionmentioning

confidence: 99%

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Ion energy distributions in highly transient EUV induced plasma in hydrogen

Ven

Reefman

Meijere

et al. 2018

Journal of Applied Physics

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This work reports on the measurements of ion flux composition and ion energy distribution functions (IEDFs) at surfaces in contact with hydrogen plasmas induced by extreme ultraviolet (EUV) radiation. This special type of plasma is gaining interest from industries because of its appearance in extreme ultraviolet lithography tools, where it affects exposed surfaces. The studied plasma is induced in 5 Pa hydrogen gas by irradiating the gas with short (30 ns) pulses of EUV radiation (k ¼ 10-20 nm). Due to the low duty cycle (10-4), the plasma is highly transient. The composition and IEDF are measured using an energy resolved ion mass spectrometer. The total ion flux consists of H þ ; H þ 2 , and H þ 3. H þ 3 is the dominant ion as a result of the efficient conversion of H þ 2 to H þ 3 upon collision with background hydrogen molecules. The IEDFs of H þ 2 and H þ 3 appear similar, showing a broad distribution with a cutoff energy at approximately 8 eV. In contrast, the IEDF of H þ shows an energetic tail up to 18 eV. Most probably, the ions in this tail gain their energy during their creation process by photoionization and dissociative electron impact ionization.

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Evaluation of H₂ Plasma‐Induced Damage in Materials for EUV Lithography

Choe,

Choi,

Kim

et al. 2023

Adv Materials Inter

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Ultrafine semiconductor fabrication by lithography has undergone a significant transition from deep ultraviolet (DUV) to extreme ultraviolet (EUV) processes, which presents new challenges. Specifically, the damage caused to components utilized in an EUV system, such as multilayer mirrors, reticles, and pellicles within lithography equipment, owing to EUV‐induced H2 plasma, is a critical issue that directly affects the process yield and equipment lifespan. To address these issues, it is crucial to establish an environment similar to that of EUV‐induced plasma and develop a method to evaluate the resulting damage. Accordingly, an evaluation method is developed for assessing the material damage caused by hydrogen radicals and ions in inductively coupled H2 plasma. In these systems, the electron density ranged from 5 × 108 to 3.5 × 1010 cm−3, the electron temperature ranged from 1 to 4 eV, and the ion energy ranged from several to tens of eV; these conditions closely align with the environment of an EUV‐induced H2 plasma. The damage to Mo2C, a potential EUV pellicle material, is quantitatively analyzed by measuring the fraction of the pore area and examining the chemical characteristics after exposing the samples to various plasma conditions, including electron density, gas pressure, and exposure time.

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Computer simulation of blistering in multilayer mirrors for EUV lithography

Cited by 13 publications

References 3 publications

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

Ion energy distributions in highly transient EUV induced plasma in hydrogen

Evaluation of H₂ Plasma‐Induced Damage in Materials for EUV Lithography

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Computer simulation of blistering in multilayer mirrors for EUV lithography

Cited by 13 publications

References 3 publications

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

Ion energy distributions in highly transient EUV induced plasma in hydrogen

Evaluation of H2 Plasma‐Induced Damage in Materials for EUV Lithography

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Evaluation of H₂ Plasma‐Induced Damage in Materials for EUV Lithography