Computer engineering: Feeling the heat

Ball, Philip

doi:10.1038/492174a

Cited by 128 publications

(66 citation statements)

References 4 publications

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“…As the electronics industry expands rapidly and chip fabrication technology evolves towards further miniaturization, power density and heat flux increase steeply [1,2]. Thermal management becomes a critical bottleneck for the advancement of a variety of important defense, space and commercial applications.…”

Section: Introductionmentioning

confidence: 99%

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Tang

et al. 2016

Phys. Rev. B

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Cubic boron arsenide (BAs) was predicted to have an exceptionally high thermal conductivity (k) ~2000 Wm -1 K -1 at room temperature, comparable to that of diamond, based on first-principles calculations. Subsequent experimental measurements, however, only obtained a k of ~200 WmTo gain insight into this discrepancy, we measured phonon dispersion of single crystal BAs along high symmetry directions using inelastic x-ray scattering (IXS) and compared these with first-principles calculations. Based on the measured phonon dispersion, we have validated the theoretical prediction of a large frequency gap between acoustic and optical modes and bunching of acoustic branches, which were considered the main reasons for the predicted ultrahigh k. This supports its potential to be a super thermal conductor if very high-quality single crystal samples can be synthesized.

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Section: Introductionmentioning

confidence: 99%

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Tang

et al. 2016

Phys. Rev. B

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“…The design of future materials and technologies to address critical needs ranging from waste heat recovery (low κ l thermoelectrics) [9] to heat management in nano-and micro-electronics (e.g., high κ l heat sinks and thermal interface materials) [10], hinges on this understanding. In terms of "high κ l " materials, diamond [11][12][13] is the long-standing champion for bulk materials, with graphene [14,15] more recently reinforcing the view that carbon-based materials are the best heat conductors.…”

Section: Introductionmentioning

confidence: 99%

Optic phonon bandwidth and lattice thermal conductivity: The case ofLi2X(X=O, S, Se, Te)

2016

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We examine the lattice thermal conductivities (κ l ) of Li 2 X (X=O, S, Se, Te) using a firstprinciples Peierls-Boltzmann transport methodology. We find low κ l values ranging between 12and 30 W/m-K despite light Li atoms, a large mass difference between constituent atoms and tightly bunched acoustic branches, all features that give 'high κ l ' in other materials including BeSe (630 W/m-K), BeTe (370 W/m-K) and cubic BAs (3170 W/m-K). Together these results suggest a missing "ingredient" in the basic guidelines commonly used to understand and predict κ l . Unlike typical simple systems (e.g., Si, GaAs, SiC), the dominant resistance to heat-carrying acoustic phonons in Li 2 Se and Li 2 Te comes from interactions of these modes with two optic phonons. These interactions require significant bandwidth and dispersion of the optic branches, both present in Li 2 X materials. These considerations are important for the discovery and design of new materials for thermal management applications, and give a more comprehensive understanding of thermal transport in crystalline solids.

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“…One of the great challenges of modern society is related to heat dissipation . As for integrated electronics and LEDs, heat dissipation has become their main obstacle for future developments with high integration densities leading to high‐power density and numerous interfaces leading to high interface resistance .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and growth mechanism of single crystal β‐Si₃N₄ particles with a quasi‐spherical morphology

Sun

Wang

et al. 2018

J Am Ceram Soc

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Single‐crystal β‐Si3N4 particles with a quasi‐spherical morphology were synthesized via an efficient carbothermal reduction‐nitridation (CRN) strategy. The β‐Si3N4 particles synthesized under an N2 pressure of 0.3 MPa, at 1450°C and with 10 mol% unique CaF2 additives showed good dispersity and an average size of about 650 nm. X‐ray photoelectron spectroscopy analysis revealed that there was no SiC or Si–C–N compounds in the β‐Si3N4 products. Selected‐area electron‐diffraction pattern and high‐resolution image indicated single crystalline structure of the typical β‐Si3N4 particles without an obvious amorphous oxidation layer on the surface. The growth mechanism of the quasi‐spherical β‐Si3N4 particles was proposed based on the transmission electron microscopy and energy dispersive X‐ray spectroscopy characterization, which was helpful for controllable synthesis of β‐Si3N4 particles by CRN method. Owing to the quasi‐spherical morphology, good dispersity, high purity, and single‐crystal structure, the submicro‐sized β‐Si3N4 particles were promising fillers for preparing resin‐based composites with high thermal conductivity.

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Computer engineering: Feeling the heat

Cited by 128 publications

References 4 publications

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Optic phonon bandwidth and lattice thermal conductivity: The case ofLi2X(X=O, S, Se, Te)

Synthesis and growth mechanism of single crystal β‐Si₃N₄ particles with a quasi‐spherical morphology

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Computer engineering: Feeling the heat

Cited by 128 publications

References 4 publications

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Optic phonon bandwidth and lattice thermal conductivity: The case ofLi2X(X=O, S, Se, Te)

Synthesis and growth mechanism of single crystal β‐Si3N4 particles with a quasi‐spherical morphology

Contact Info

Product

Resources

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Synthesis and growth mechanism of single crystal β‐Si₃N₄ particles with a quasi‐spherical morphology