Computer automated charge transport measurement system

Lyding, Joseph W.; Marcy, Henry O.; Marks, T. J.; Kannewurf, Carl R.

doi:10.1109/19.2668

Cited by 97 publications

(47 citation statements)

References 8 publications

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“…The setting of the cell was standardized with the STRUCTURE TIDY program. [49] Physical properties: A conventional four-probe method and a slow ac technique were used for electrical conductivity and thermopower measurements [50] in the temperature range of 4±300 K.…”

Section: Methodsmentioning

confidence: 99%

Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

Zhuravleva¹,

Salvador²,

Bilc³

et al. 2004

Chemistry A European J

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Two new intermetallic compounds, Yb(2)Ga(4)Ge(6) and Yb(3)Ga(4)Ge(6), were obtained from reactions in molten Ga. A third compound, Eu(3)Ga(4)Ge(6), was produced by direct combination of the elements. The crystal structures of these compounds were studied by single-crystal X-ray diffraction. Yb(2)Ga(4)Ge(6) crystallizes in an orthorhombic cell with a=4.1698(7), b=23.254(4), c=10.7299(18) A in the polar space group Cmc2(1). The structure of RE(3)Ga(4)Ge(6) is monoclinic, space group C2/m, with cell parameters a=23.941(6), b=4.1928(11), c=10.918(3) A, beta=91.426(4) degrees for RE=Yb, and a=24.136(2), b=4.3118(4), c=11.017(1) A, beta=91.683(2) degrees for RE=Eu. The refinement [I>2 sigma(I)] converged to the final residuals R(1)/wR(2)=0.0229/0.0589, 0.0411/0.1114, and 0.0342/0.0786 for Yb(2)Ga(4)Ge(6), Yb(3)Ga(4)Ge(6), and Eu(3)Ga(4)Ge(6), respectively. The structures of these two families of compounds can be described by a Zintl concept of bonding, in which the three-dimensional [Ga(4)Ge(6)](n-) framework serves as a host and electron sink for the electropositive RE atoms. The structural relation of RE(3)Ga(4)Ge(6) to of Yb(2)Ga(4)Ge(6) lies in a monoclinic distortion of the orthorhombic cell of Yb(2)Ga(4)Ge(6) and reduction of the [Ga(4)Ge(6)] network by two electrons per formula unit. The results of theoretical calculations of the electronic structure, electrical transport data, and thermochemical and magnetic measurements are also reported.

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Section: Methodsmentioning

confidence: 99%

Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

Zhuravleva¹,

Salvador²,

Bilc³

et al. 2004

Chemistry A European J

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“…Film surface microstructure was imaged with a Hitachi S4500 FE SEM equipped with a light element EDS. Variable-temperature Hall effect and four-probe conductivity data were collected between 4 K and 330 K using instrumentation described previously [35]. Optical transmittance spectra were acquired with a Cary 500 UV-vis-IR spectrophotometer and are referenced to the spectrum of the uncoated substrate.…”

Section: Methodsmentioning

confidence: 99%

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

Metz¹,

Lane²,

Kannewurf³

et al. 2004

Chemical Vapor Deposition

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Transparent conducting oxides (TCOs) are an important component of a great many opto-electronic device structures, including flat panel displays, organic light-emitting diodes (OLEDs), and photovoltaics (PVs).[1] Tin-doped indium oxide (ITO) is the best known and most studied of these materials, [2,3] but has severe limitations. The high price of indium, sub-optimal conductivity and transparency window, and chemical/interfacial instability in many PV [4] and OLED [5] structures, have stimulated a search for alternative materials. Cd 2 SnO 4 has been the subject of intense investigation, [6±11] exploring its potential as a low-cost, high-performance alternative to ITO, and Cd 2 SnO 4 has been incorporated into PV device structures with promising results (efficiencies > 15 %). [12,13] Cd 2 SnO 4 thin films have been prepared by several different growth techniques including radio frequency (RF) magnetron sputtering, [9,10,13±16] RF reactive sputtering, [6] pulsed laser deposition (PLD), [17] dip coating, [8,18] and sol±gel methods. [19] As-deposited films produced by these techniques are often amorphous and require high temperature annealing to promote crystallization and to enhance optoelectronic properties. We are, however Its attractive characteristics include a straightforward, onestep aqueous synthesis under ambient conditions from commercially available starting materials, excellent volatility, as well as excellent air and thermal stability. Further advances in cadmium precursor technology by our laboratory, [24] and the complementary approaches of other groups, [25] have resulted in an increased film growth capability for discovery, synthesis, and optimization of cadmium-containing opto-electronic materials. In this contribution, we report the first growth of transparent conducting Cd 2 SnO 4 films by a MOCVD process. As-deposited, the films are highly crystalline on glass substrates at the relatively low growth temperature of 365 C, and have electrical and optical properties rivaling those of commercial ITO. CdO-SnO 2 films were grown on Corning 1737F glass (softening point = 975 C) at 365 C, and carrier gas ratios were adjusted until films with 2:1 Cd/Sn ratios (± 1 %) were obtained, as determined by inductively coupled plasma atomic-emission spectroscopy (ICP-AES). Films grown for 1.5 h have a thickness of 970 nm by profilometry (growth rate = 10.8 nm min ±1 ). The as-deposited films are highly crystalline with the cubic spinel Cd 2 SnO 4 crystal structure, [26] as determined by X-ray diffraction (XRD) h±2h scans ( Fig. 1). A small amount of CdO may be responsible for the broad (400) reflection at 39. Scanning electron miCommunications

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“…The electrical conductivity of the single crystal samples was measured with the use of a computer-controlled, four-probe technique (11). Electrical contacts consisted of "ne gold wire (25 and 60 m in diameter) attached to the crystals with gold paste.…”

Section: Electrical Conductivitymentioning

confidence: 99%

Synthesis, Structure, Electrical Conductivity, and Band Structure of the Rare-Earth Copper Oxychalcogenide La5Cu6O4S7

Huang

Brazis

Kannewurf

et al. 2000

Journal of Solid State Chemistry

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Computer automated charge transport measurement system

Cited by 97 publications

References 8 publications

Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

Synthesis, Structure, Electrical Conductivity, and Band Structure of the Rare-Earth Copper Oxychalcogenide La5Cu6O4S7

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Computer automated charge transport measurement system

Cited by 97 publications

References 8 publications

Intermetallics as Zintl Phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): Structural Response of a [Ga4Ge6]4− Framework to Reduction by Two Electrons

Intermetallics as Zintl Phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): Structural Response of a [Ga4Ge6]4− Framework to Reduction by Two Electrons

MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films

Synthesis, Structure, Electrical Conductivity, and Band Structure of the Rare-Earth Copper Oxychalcogenide La5Cu6O4S7

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Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

Intermetallics as Zintl Phases: Yb₂Ga₄Ge₆ and RE₃Ga₄Ge₆ (RE=Yb, Eu): Structural Response of a [Ga₄Ge₆]⁴⁻ Framework to Reduction by Two Electrons

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films