Computer analysis of back-surface field silicon solar cells

Abstract

A series of new metal-dithiene complexes absorbing in the near infrared were shown to Q switch the Nd-glass laser. Attempts to shorten the ground-state recovery time by heavy-atom substituents led to the preparation of a platinum complex which causes partial mode locking of the laser. The new Q-switch dyes are extremely stable towards infrared radiation.

Functionalization of Silicon Nanostructures for Energy‐Related Applications

“…Next, we describe a method of reducing electron–hole recombination at the rear surface of cells . The effect is called back surface field (BSF) . In our study, n + ‐Si BSF layers were formed by phosphorus diffusion on the rear surface of n‐Si substrates, which effectively reflect minority carriers (holes).…”

Leakage current study of a high-low junction with variation of injection level

“…The high-low junction leakage current is a measure of the effectiveness of the high-low junction, the knowledge of which is essential in the fabrication of semiconductor devices like back surface field silicon solar cells, high-low emitter structures of bipolar transistors, viz., low-emitter-concentration (LEC) [ 11, double-emitter-diffused ( D E D ) [7] bipolar transistors, and integrated injection logic systems [3,4]. Theoretical studies [5,6] and experimental results [7,81 reveal the usefulness of a high-low junction at the back side of a solar cell. Gunn [9] first characterised the minority carrier reflecting properties of a high-low junction with a junction leakage velocity, known as the effective surface recombination velocity (Scff) of the high-low junction.…”

“…Now, the combination of (3) and (7) with (lo), with the assumptions n, % np and n2 8 n,+ Results Equation (1 I ) may be used for numerical computations to study the variation of the high-low junction leakage current with injection level on the p-side of the junction. Plots of J versus rip are drawn in Fig.…”