Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga₂SSe monolayer

Abstract

Two-dimensional chalcogenides could play an important role to solve the short channel effect and extend the Moore's law in the post-Moore's era due to the excellent performances in the spintronics...

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

“…[4][5][6][7][8] The family of 2D semiconductor materials such as black phosphorus (BP), [9] transition metal dichalcogenides (TMDs), [10,11] transition metal carbides/nitrides (MXenes), [12,13] and III-VI compounds. [14][15][16] However, the absence of a band gap in graphene, the instability of BP under environmental conditions, and the relatively low mobility (≈200 cm 2 V −1 s −1 ) of TMDs limit their application in high performance devices. [9,17,18] Therefore, building novel field-effect transistors (FETs) based on novel 2D semiconductors is of great interest and importance.…”

Janus structures of the C2h polymorph of gallium monochalcogenides: first-principles examination of Ga2XY (X/Y = S, Se, Te) monolayers

“… 29 However, the electron carrier of Janus Ga 2 SSe is one order of magnitude smaller than that of the Janus C 3v -Ga 2 SSe (1.31 × 10 4 cm 2 V −1 s −1 ). 51 …”

Predicted superconductivity in one-dimensional A3Hf2B3-type electrides

“…The PBE-GGA functional was adopted to describe the exchange and correctional interactions of electrons with a linear combination of atomic orbitals (LCAO) norm-conserving PseudoDojo pseudopotential, 47 which contains scalar relativistic and fully relativistic pseudopotentials for each element and it is shipped with multiple projectors for each angular channel to ensure high accuracy. 48 The density mesh cutoff was set to 85 Hartree,and a 7 × 7 × 7 k -point mesh was generated by the Monkhorst–Pack method with Γ symmetry. Structural optimization was executed until the maximum forces converged to 0.001 eV Å −1 .…”