Comprehensive study of structural and optical properties of LT-GaAs epitaxial structures

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

“…The approach must also deal with a thermal expansion mismatch and a low index contrast for waveguides on the silicon substrate. [9][10][11][12][13][14][15] An alternative approach investigated here is to use sapphire as a substrate in place of silicon. This approach brings together onto one platform two of the most important inventions of the 20th century: (1) the silicon integrated circuit and (2) the semiconductor laser.…”

“…The approach must also deal with a thermal expansion mismatch and a low index contrast for waveguides on the silicon substrate. 9–15…”