Comprehensive review of the morphological, linear and nonlinear optical characterization of spin-coated NiO thin films for optoelectronic applications

Chtouki, T.; Mrabet, M. El; Tarbi, A.; Goncharova, I. V.; Erguig, H.

doi:10.1016/j.optmat.2021.111294

Cited by 28 publications

(10 citation statements)

References 69 publications

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“…Usually, the spin-coating technique embodies four stages, as shown in Figure 9 [ 66 ]. The required film can be achieved by layer-by-layer spin coating, followed by drying at a suitable temperature at each step.…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…This is mainly because variation in the preferred orientation due to the rearrangement of grain orientation was inevitable, resulting in the splitting of some grains. Subsequently, a reduction in grain size results in a reduction in carrier mobility [ 66 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…For instance, crystallite size of CuO thin films was found to increase as spin speed increased to 3000 rpm [ 72 ]. Accordingly, the Eg value can be altered with higher spin speed due to the variation in the grain size and lower film thickness [ 66 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…Increasing the substrate temperature was found to increase the crystallinity of NiO due to the variation of the defects and strains [ 89 ]. For instance, NiO thin films prepared at higher substrate temperatures show higher Eg due to adatom mobility, which also enhances crystallite size and crystallinity [ 66 ]. Crystallinity can be increased in Co 3 O 4 by annealing at higher temperatures (>700 °C) [ 90 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

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P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Moumen

Kumarage

Comini

2022

Sensors

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This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

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Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

See 2 more Smart Citations

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Moumen

Kumarage

Comini

2022

Sensors

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“…[ 19 , 20 ]. Among these, sol-gel technology is widely used due to its relative simplicity, low cost, depositing uniform coatings, control of film thickness, and reproducibility [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

et al. 2022

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In our study, transparent and conductive films of NiOx were successfully deposited by sol-gel technology. NiOx films were obtained by spin coating on glass and Si substrates. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 °C. X-ray Photoelectron (XPS) spectroscopy revealed that NiO was formed at the annealing temperature of 400 °C and showed the presence of Ni+ states. The optical transparency of the films reached 90% in the visible range for 200 °C treated samples, and it was reduced to 76–78% after high-temperature annealing at 500 °C. The optical band gap of NiOx films was decreased with thermal treatments and the values were in the range of 3.92–3.68 eV. NiOx thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10−3 Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells.

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Optoelectronic properties of spray pyrolyzed NiO:Pr thin films

et al. 2022

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Comprehensive review of the morphological, linear and nonlinear optical characterization of spin-coated NiO thin films for optoelectronic applications

Cited by 28 publications

References 69 publications

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

Optoelectronic properties of spray pyrolyzed NiO:Pr thin films

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