Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry 
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 Transistors

Wang, Zhongwang; Liu, Xiaochi; Lei, Huixia; Lu, Yang; Yuan, Yahua; Qu, Yuanyuan; Mizuta, Hiroshi; Yoo, Won Jong; Sun, Jian

doi:10.1103/physrevapplied.17.044017

Phys. Rev. Applied

2022

DOI: 10.1103/physrevapplied.17.044017

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Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors

Zhongwang Wang

Xiaochi Liu

Huixia Lei

et al.

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Cited by 4 publications

(2 citation statements)

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“…However, previous research works including ones of our research group have reported mainly on the conductance anisotropy in the channel, not the contact resistance anisotropy, particularly with edge contact 8,18,19 . We find that studying the contact resistance anisotropy in 2D FETs with edge contact is very critical for utilizing high anisotropy ratio that can be obtained from future asymmetric orientation-dependent FETs.…”

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confidence: 91%

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Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

Park,

Lee,

Wang

et al. 2024

Commun Mater

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The in-plane anisotropy of electrical conductance in two-dimensional materials has garnered significant attention due to its potential in emerging device applications, offering an additional dimension to control carrier transport in 2D devices. However, previous research has primarily focused on the anisotropy within electrical channel, neglecting the significant impact of anisotropic electrical contacts of 2D materials. Here, we investigate anisotropic charge transport at the metal contacts of hBN-encapsulated ReS2 using edge-contacted Field Effect Transistors. We observed the marked difference in contact resistance between the cross-b and b directions, suggesting that charge transport from the metal to ReS2 is more efficient along the b direction. This difference in efficiency results in a substantial contact anisotropy, reaching ~70 at 77 K. Our findings indicate that the measured Schottky Barrier Height along the b direction is ~35 meV, which is smaller than along the cross-b direction. Moreover, the tunneling probability along the b direction is two times larger than along the cross-b direction. Our results indicate that both Schottky Barrier Height and tunneling amplitude are the primary contributors to the high contact anisotropy of ReS2. This work provides a valuable guideline for understanding how in-plane orientation influences charge transport at metallic contacts in 2D devices.

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confidence: 91%

“…Recently, Wang et al reported the conductance anisotropy controlled by thermionic emission and carrier drift in low-symmetry ReS 2 transistors 18 . On the other hand, our group employed the edge contact method to eliminate out-of-plane conductance, so that precise measurement of the orientation-dependent in-plane conductance of the BP channel can be made.…”

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confidence: 99%

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

Park,

Lee,

Wang

et al. 2024

Commun Mater

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2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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Air‐Sensitive HfSe₂‐Based Temperature Indicator for 2D Electronic Devices

Shen

Yang

Yuan

et al. 2023

Physica Rapid Research Ltrs

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Joule heating‐induced temperature distribution is a critical thermal issue in 2D electronics, with implications for their performance optimization and potential device failure. Herein, the feasibility of using van der Waals integrated HfSe2 to indicate surface temperature distribution in 2D electronics is demonstrated. The air oxidation of HfSe2 is found to be sensitive to its thickness and ambient temperatures, with the resulting oxidation products varying accordingly. Joule heating from the operation of 2D devices rises the local temperature, which accelerates the air oxidation of HfSe2 and changes the composition of the oxidized HfSe2 accordingly. By observing the surface conditions of HfSe2 with a Raman spectroscope or an optical microscope, the temperature distribution is semiquantitatively revealed for a graphene ribbon device, the accuracy of which is verified by the finite element simulations. Using the HfSe2, temperature indicator provides a simple and rapid method for investigating thermal issues and related device failure mechanisms in 2D electronics.

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Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors

Cited by 4 publications

References 35 publications

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Air‐Sensitive HfSe₂‐Based Temperature Indicator for 2D Electronic Devices

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Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors

Cited by 4 publications

References 35 publications

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Air‐Sensitive HfSe2‐Based Temperature Indicator for 2D Electronic Devices

Contact Info

Product

Resources

About

Air‐Sensitive HfSe₂‐Based Temperature Indicator for 2D Electronic Devices