Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Abstract

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is performed down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only necessary to fit the capacitance and drain current transfer characteristics versus temperature for long channel devices. In contrast, in short channel transistors, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased impact of neutral defects close to source/drain ends whatever the temperature. Moreover, a closed-form analytical expression for the Coulomb scattering has been developed, useful for device compact modelling.

Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures

“…Prior work on 28-nm FD-SOI technology node has reported cryogenic device behavior extensively [8], [9], [10], [11], [12], [13], [14], [15], [16]. Extensive work on the enhancement of industry standard compact models to include the cryogenic temperature effects has also been reported [17], [18], [19], [20], [21], [22], [23], [24], [25], [26], [27], [28], [29]. The effect of back gate bias towards dc parameter modulation down to cryogenic temperatures was shown in [16], [30], [31].…”