Comprehensive analysis of spin coated copper zinc tin sulfide thin film absorbers

Özdal, Teoman; Kavak, Hamide

doi:10.1016/j.jallcom.2017.07.209

Cited by 14 publications

(6 citation statements)

References 53 publications

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“…The process was repeated three times to ensure that the initial films reached the desired thickness of ~2 µm. The resultant CZTS thin films were annealed for 30 min in a tube furnace at 550 • C in a nitrogen and sulphur environment [15]. CdS on CZTS was deposited through the chemical bath deposition method using an aqueous solution of cadmium sulfate (0.003 M), thiourea (0.03 M), and ammonia (25%) (1.6 M) at 80 • C for 25 min.…”

Section: Methodsmentioning

confidence: 99%

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Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

et al. 2021

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In the present study, we provide useful data related to one of the most promising materials in thin-film solar cell technologies: Cu2ZnSnS4 (CZTS) kesterite structures. Sol-gel spin coating and chemical bath deposition methods were used to fabricate and further investigate Mo/CZTS/CdS/ZnO/AZO heterostructures. In order to examine the crystal structure of the samples, Raman scattering measurements using two excitation wavelengths (514.5 nm and 785 nm) were performed. Three Raman bands related to CZTS were found, as well as one that had its origin in CdS. By using laser ablation and performing Raman spectroscopy on these modified samples, it was shown that during the manufacturing process a MoS2 interlayer was formed between the CZTS and Mo layers. Our method proved that the CZTS layer in a multilayer device structure fabricated by solution-based methods can be decomposed, and thus a detailed analysis of the layer can be performed. Subsequently, current-voltage curves were investigated in terms of the essential electrical properties of glass/Mo/p-CZTS/n-CdS/ZnO/AZO junctions and occurring current transport mechanisms. Finally, AFM data were acquired to study the surface topography of the studied samples. The images showed that these surfaces had a uniform grain structure.

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Section: Methodsmentioning

confidence: 99%

“…The highest-efficiency solar cell device with a CZTS absorber layer was prepared by the spin coating method [14]. This is why the influence of parameters such as spin speed, solution molarity, and annealing temperature on the properties of CZTS thin films prepared in this way has been widely examined recently [15].…”

Section: Introductionmentioning

confidence: 99%

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

et al. 2021

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“…Sputter-deposited CZTS has yielded PV cells with the record efficiency of 10% for a relatively large cell area (1.11 cm 2 ) and 11% for smaller cells [6]. The solution-based deposition techniques which include dip coating [9][10][11], electrodeposition [12,13], spray pyrolysis [14,15], and spin coating [16][17][18][19][20][21][22][23], among some others, are the desirable routes due to their low cost, large area growth, non-vacuum processing, and compatibility to the printed electronics. It is well known that the preparation of single-phase CSTS is challenging.…”

Section: Introductionmentioning

confidence: 99%

Cu₂ZnSnS₄ films with Cu-poor composition prepared by spin coating from a nontoxic methanol-based solution: the effect of annealing temperature

Rakhshani

Thomas

2020

Journal of Asian Ceramic Societies

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In comparison with the stoichiometry and Zn-rich/Cu-poor compositions of Cu 2 ZnSnS 4 (CZTS) photovoltaic material, the properties of Cu-poor films have not been explored adequately. In this study, Cu-poor films were spin-coated from a non-hazardous methanol-based solution. Films were subject to a brief annealing process in the temperature range of 350-550 °C. Asgrown and annealed films were uniform, compact, photosensitive, and free from secondary phases. As the annealing temperature increased, the size of crystallites increased and the film dislocation density decreased steadily. Films had a direct bandgap of 1.4-1.5 eV. The presence of three sub-bandgap transitions were detected and identified. By varying the annealing temperature, hole concentration, hole mobility, and film resistivity varied systematically in the range of 10 16-10 18 cm −3 , 1-140 cm 2 /V-s, and 0.02-64 Ωcm, respectively. Cu-poor films showed structural and optoelectronic properties similar to the Zn-rich/Cu-poor and stoichiometric films and, thus, have the potential for device applications.

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“…23 Therefore, it is highly beneficial to select an appropriate precursor for 24 the single-step deposition of CZTS active layers, while also utilising a highly 25 scalable process. Furthermore, the selected precursor should preferably func- 26 tion as a low temperature precursor, as it has been well reported that high 27 temperatures can result in the loss volatile components (such as SnS and S) 28 damaging the stoichiometry of the CZTS active layer [18,20,[22][23][24]. 29 Metal xanthates have been used as a low temperature single-source pre- 30 cursor to form metal sulfides, with the general formula [M(S 2 COR) n ], where 31 R is an alkyl group, and have been shown to be viable precursors for Cu 2 ZnSnS 4 32 [21, [25][26][27][28][29].…”

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Synthesis and performance optimisation of spray coated Cu2ZnSnS4 absorbing layers from single-source xanthate precursors

et al. 2019

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Cu 2 ZnSnS 4 (CZTS) is a promising non-toxic and cheap absorber layer for the use in photovoltaic cells. In this work copper, zinc and tin xanthates were synthesised and deposited using a single-source spray coating technique to produce CZTS thin films, to investigate how the ratio of these precursors can alter the performance of the device. It was determined that using a tin rich xanthate precursor mix resulted in the thin film with the chemical composition closest to CZTS, with few contaminating phases (i.e. Cu 2-x S, Cu 2 SnS 3 and ZnS). To explain this observation, isothermal thermal gravimetric analysis was used to determine rate constants for the decomposition of these xanthate precursors. The rate constants of copper xanthate and zinc xanthate align very well (1.26 and 1.24 s -1 respectively). However, the rate constant for tin xanthate differs significantly (1.09 s -1 ). Therefore, to form the appropriate ratio in the final product, a tin rich precursor mixture is required. This tin rich xanthate sample was shown to have a band gap of * 1.73 eV and a power conversion efficiency of 0.15 %.

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Comprehensive analysis of spin coated copper zinc tin sulfide thin film absorbers

Cited by 14 publications

References 53 publications

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Cu₂ZnSnS₄ films with Cu-poor composition prepared by spin coating from a nontoxic methanol-based solution: the effect of annealing temperature

Synthesis and performance optimisation of spray coated Cu2ZnSnS4 absorbing layers from single-source xanthate precursors

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Comprehensive analysis of spin coated copper zinc tin sulfide thin film absorbers

Cited by 14 publications

References 53 publications

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Cu2ZnSnS4 films with Cu-poor composition prepared by spin coating from a nontoxic methanol-based solution: the effect of annealing temperature

Synthesis and performance optimisation of spray coated Cu2ZnSnS4 absorbing layers from single-source xanthate precursors

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Cu₂ZnSnS₄ films with Cu-poor composition prepared by spin coating from a nontoxic methanol-based solution: the effect of annealing temperature